000838034 001__ 838034
000838034 005__ 20231023093615.0
000838034 0247_ $$2Handle$$a2128/15699
000838034 0247_ $$2ISSN$$a1866-1807
000838034 020__ $$a978-3-95806-246-7
000838034 037__ $$aFZJ-2017-06777
000838034 041__ $$aEnglish
000838034 1001_ $$0P:(DE-Juel1)159254$$aBäumer, Christoph$$b0$$eCorresponding author$$gmale$$ufzj
000838034 245__ $$aSpectroscopic characterization of localvalence change processes in resistivelyswitching complex oxides$$f- 2017-10-26
000838034 260__ $$aJülich$$bForschungszentrum Jülich GmbH Zentralbibliothek, Verlag$$c2017
000838034 300__ $$aX, 206 S.
000838034 3367_ $$2DataCite$$aOutput Types/Dissertation
000838034 3367_ $$0PUB:(DE-HGF)3$$2PUB:(DE-HGF)$$aBook$$mbook
000838034 3367_ $$2ORCID$$aDISSERTATION
000838034 3367_ $$2BibTeX$$aPHDTHESIS
000838034 3367_ $$02$$2EndNote$$aThesis
000838034 3367_ $$0PUB:(DE-HGF)11$$2PUB:(DE-HGF)$$aDissertation / PhD Thesis$$bphd$$mphd$$s1509009638_28199
000838034 3367_ $$2DRIVER$$adoctoralThesis
000838034 4900_ $$aSchriften des Forschungszentrums Jülich. Reihe Schlüsseltechnologien / Key Technologies$$v150
000838034 502__ $$aRWTH Aachen, Diss., 2016$$bDr.$$cRWTH Aachen$$d2016
000838034 520__ $$aAn increasingly interconnected world creates a high demand for high-density and lowcost data storage. Redox-based memristive devices, which allow switching between high and low electrical resistances through the application of voltages, are highly attractive candidates for next-generation non-volatile memory. But their control and rational design is complicated by poorly understood switching and failure mechanisms. The complex nanoscale redox processes that are suspected to drive so-called resistive switching in these devices remain in adequately characterized. Especially, quantitative information about these processes, which is essential for further advances in the educated design, has been experimentally in accessible so far. Therefore, spectroscopic tools with high spatial resolution are employed in this work to elucidate both switching and failure mechanism of memristive devices based on the model material SrTiO$_{3}$. After thorough electrical characterization, two alternative photoelectron emission microscopy approaches are used. As photoemission is a surface sensitive process, the top electrodes of the devices are removed before investigation in the first approach. In the second step, thin graphene electrodes are employed, enabling $\textit{in operando}$ characterization. In combination with cross sectional, $\textit{in operando}$ transmission electron microscopy and spectroscopy, a clear evidence of a reversible, localized redox reaction is identied. In the low resistance state, a nanoscale lamentin the SrTiO$_{3}$ is oxygen-decient, while it is nearly stoichiometric in the high resistance state, resulting in a valence change between Ti$^{3+}$ and Ti$^{4+}$. The carrier concentration modulation resulting from this valence change is quantied through comparison with calibration spectra. A carrier concentration change by a factor of two causes two orders of magnitude change in device resistance through a modulation of the effective Schottky barrier at the electrode/oxide interface. The microscopic origin of the polarity of the resistance hysteresis in these devices has long been debated, as it cannot be explained by the typically involved purely internal redistribution of oxygen vacancies. The spectroscopic results of this work reveal that instead, oxygen evolution and reincorporation reactions at the electrode/oxide interface are responsible for the valence change in the SrTiO$_{3}$. Regarding the failure mechanism, it is found that fast reoxidation frequently results in retention failure in SrTiO$_{3}$ devices, which can be inhibited by incidental, local phase separations. Mimicking this phase separation by intentionally introducing retention-stabilization layers with slow oxygen transport is therefore derived as a design rule for retention-failure-resistant devices.
000838034 536__ $$0G:(DE-HGF)POF3-899$$a899 - ohne Topic (POF3-899)$$cPOF3-899$$fPOF III$$x0
000838034 8564_ $$uhttps://juser.fz-juelich.de/record/838034/files/Schluesseltech_150.pdf$$yOpenAccess
000838034 8564_ $$uhttps://juser.fz-juelich.de/record/838034/files/Schluesseltech_150.gif?subformat=icon$$xicon$$yOpenAccess
000838034 8564_ $$uhttps://juser.fz-juelich.de/record/838034/files/Schluesseltech_150.jpg?subformat=icon-1440$$xicon-1440$$yOpenAccess
000838034 8564_ $$uhttps://juser.fz-juelich.de/record/838034/files/Schluesseltech_150.jpg?subformat=icon-180$$xicon-180$$yOpenAccess
000838034 8564_ $$uhttps://juser.fz-juelich.de/record/838034/files/Schluesseltech_150.jpg?subformat=icon-640$$xicon-640$$yOpenAccess
000838034 909CO $$ooai:juser.fz-juelich.de:838034$$pdnbdelivery$$pVDB$$pdriver$$popen_access$$popenaire
000838034 915__ $$0StatID:(DE-HGF)0510$$2StatID$$aOpenAccess
000838034 915__ $$0LIC:(DE-HGF)CCBY4$$2HGFVOC$$aCreative Commons Attribution CC BY 4.0
000838034 9141_ $$y2017
000838034 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)159254$$aForschungszentrum Jülich$$b0$$kFZJ
000838034 9131_ $$0G:(DE-HGF)POF3-899$$1G:(DE-HGF)POF3-890$$2G:(DE-HGF)POF3-800$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bProgrammungebundene Forschung$$lohne Programm$$vohne Topic$$x0
000838034 920__ $$lyes
000838034 9201_ $$0I:(DE-Juel1)PGI-7-20110106$$kPGI-7$$lElektronische Materialien$$x0
000838034 980__ $$aphd
000838034 980__ $$aVDB
000838034 980__ $$aUNRESTRICTED
000838034 980__ $$abook
000838034 980__ $$aI:(DE-Juel1)PGI-7-20110106
000838034 9801_ $$aFullTexts