TY  - JOUR
AU  - Wei, Xian-Kui
AU  - Sluka, Tomas
AU  - Fraygola, Barbara
AU  - Feigl, Ludwig
AU  - Du, Hongchu
AU  - Jin, Lei
AU  - Jia, Chun-Lin
AU  - Setter, Nava
TI  - Controlled Charging of Ferroelastic Domain Walls in Oxide Ferroelectrics
JO  - ACS applied materials & interfaces
VL  - 9
IS  - 7
SN  - 1944-8252
CY  - Washington, DC
PB  - Soc.
M1  - FZJ-2017-100012
SP  - 6539 - 6546
PY  - 2017
AB  - Conductive domain walls (DWs) in ferroic oxides as device elements are a highly attractive research topic because of their robust and agile response to electric field. Charged DWs possessing metallic-type conductivity hold the highest promises in this aspect. However, their intricate creation, low stability, and interference with nonconductive DWs hinder their investigation and the progress toward future applications. Here, we find that conversion of the nominally neutral ferroelastic 90° DWs into partially charged DWs in Pb(Zr0.1Ti0.9)O3 thin films enables easy and robust control over the DW conductivity. By employing transmission electron microscopy, conductive atomic force microscopy and phase-field simulation, our study reveals that charging of the ferroelastic DWs is controlled by mutually coupled DW bending, type of doping, polarization orientation and work-function of the adjacent electrodes. Particularly, the doping outweighs other parameters in controlling the DW conductivity. Understanding the interplay of these key parameters not only allows us to control and optimize conductivity of such ferroelastic DWs in the oxide ferroelectrics but also paves the way for utilization of DW-based nanoelectronic devices in the future.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000394829800096
DO  - DOI:10.1021/acsami.6b13821
UR  - https://juser.fz-juelich.de/record/838089
ER  -