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@ARTICLE{Wei:838089,
      author       = {Wei, Xian-Kui and Sluka, Tomas and Fraygola, Barbara and
                      Feigl, Ludwig and Du, Hongchu and Jin, Lei and Jia, Chun-Lin
                      and Setter, Nava},
      title        = {{C}ontrolled {C}harging of {F}erroelastic {D}omain {W}alls
                      in {O}xide {F}erroelectrics},
      journal      = {ACS applied materials $\&$ interfaces},
      volume       = {9},
      number       = {7},
      issn         = {1944-8252},
      address      = {Washington, DC},
      publisher    = {Soc.},
      reportid     = {FZJ-2017-100012},
      pages        = {6539 - 6546},
      year         = {2017},
      abstract     = {Conductive domain walls (DWs) in ferroic oxides as device
                      elements are a highly attractive research topic because of
                      their robust and agile response to electric field. Charged
                      DWs possessing metallic-type conductivity hold the highest
                      promises in this aspect. However, their intricate creation,
                      low stability, and interference with nonconductive DWs
                      hinder their investigation and the progress toward future
                      applications. Here, we find that conversion of the nominally
                      neutral ferroelastic 90° DWs into partially charged DWs in
                      Pb(Zr0.1Ti0.9)O3 thin films enables easy and robust control
                      over the DW conductivity. By employing transmission electron
                      microscopy, conductive atomic force microscopy and
                      phase-field simulation, our study reveals that charging of
                      the ferroelastic DWs is controlled by mutually coupled DW
                      bending, type of doping, polarization orientation and
                      work-function of the adjacent electrodes. Particularly, the
                      doping outweighs other parameters in controlling the DW
                      conductivity. Understanding the interplay of these key
                      parameters not only allows us to control and optimize
                      conductivity of such ferroelastic DWs in the oxide
                      ferroelectrics but also paves the way for utilization of
                      DW-based nanoelectronic devices in the future.},
      cin          = {ER-C-1 / PGI-5},
      ddc          = {540},
      cid          = {I:(DE-Juel1)ER-C-1-20170209 / I:(DE-Juel1)PGI-5-20110106},
      pnm          = {143 - Controlling Configuration-Based Phenomena (POF3-143)},
      pid          = {G:(DE-HGF)POF3-143},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000394829800096},
      doi          = {10.1021/acsami.6b13821},
      url          = {https://juser.fz-juelich.de/record/838089},
}