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@ARTICLE{Tromm:838129,
      author       = {Tromm, T. C. U. and Zhang, J. and Schubert, J. and
                      Luysberg, M. and Zander, W. and Han, Q. and Meuffels, P. and
                      Meertens, D. and Glass, S. and Bernardy, P. and Mantl, S.},
      title        = {{F}erroelectricity in {L}u doped {H}f{O}2 layers},
      journal      = {Applied physics letters},
      volume       = {111},
      number       = {14},
      issn         = {1077-3118},
      address      = {Melville, NY},
      publisher    = {American Inst. of Physics},
      reportid     = {FZJ-2017-06833},
      pages        = {142904 -},
      year         = {2017},
      abstract     = {Doped HfO2 has become a promising candidate for
                      non-volatile memory devices since it can beeasily integrated
                      into existing CMOS technology. Many dopants like Y, Gd, and
                      Sr have beeninvestigated for the stabilization of
                      ferroelectric HfO2. Here, we report the fabrication of
                      capacitorscomprising ferroelectric HfO2
                      metal-insulator-metal structures with TiN bottom and top
                      electrodesusing the dopant Lu. Amorphous $5\%$ Lu doped HfO2
                      was deposited by pulsed laser deposition andafterwards
                      annealed to achieve the ferroelectric, orthorhombic phase
                      (space group Pbc21). Thepolarization of the layers was
                      confirmed by capacitance-voltage, polarization-voltage, and
                      currentvoltagemeasurements. Depending on the anneal
                      temperature, the remanent polarization changesand the
                      initial state of the oxide varies. The layer exhibits
                      initially a pinched hysteresis up to anannealing temperature
                      of 600 °C and an unpinched hysteresis at 700 °C. The
                      maximum polarizationis about 11 lC/cm2 which is measured
                      after 104 cycles and stable up to 106 cycles. The influence
                      ofthe layer thickness on the oxide properties is
                      investigated for 10–40 nm thick HfLuO; however, athickness
                      dependence of the ferroelectric properties is not observed.
                      Published by AIP Publishing.},
      cin          = {PGI-9 / PGI-7 / PGI-5 / JARA-FIT / ER-C-1},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)PGI-7-20110106 /
                      I:(DE-Juel1)PGI-5-20110106 / $I:(DE-82)080009_20140620$ /
                      I:(DE-Juel1)ER-C-1-20170209},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000412645100028},
      doi          = {10.1063/1.4998336},
      url          = {https://juser.fz-juelich.de/record/838129},
}