001 | 838129 | ||
005 | 20240610120750.0 | ||
024 | 7 | _ | |a 10.1063/1.4998336 |2 doi |
024 | 7 | _ | |a 0003-6951 |2 ISSN |
024 | 7 | _ | |a 1077-3118 |2 ISSN |
024 | 7 | _ | |a 2128/16961 |2 Handle |
024 | 7 | _ | |a WOS:000412645100028 |2 WOS |
024 | 7 | _ | |a altmetric:26983464 |2 altmetric |
037 | _ | _ | |a FZJ-2017-06833 |
082 | _ | _ | |a 530 |
100 | 1 | _ | |a Tromm, T. C. U. |0 P:(DE-Juel1)165625 |b 0 |e Corresponding author |
245 | _ | _ | |a Ferroelectricity in Lu doped HfO2 layers |
260 | _ | _ | |a Melville, NY |c 2017 |b American Inst. of Physics |
336 | 7 | _ | |a article |2 DRIVER |
336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1507633529_20016 |2 PUB:(DE-HGF) |
336 | 7 | _ | |a ARTICLE |2 BibTeX |
336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
520 | _ | _ | |a Doped HfO2 has become a promising candidate for non-volatile memory devices since it can beeasily integrated into existing CMOS technology. Many dopants like Y, Gd, and Sr have beeninvestigated for the stabilization of ferroelectric HfO2. Here, we report the fabrication of capacitorscomprising ferroelectric HfO2 metal-insulator-metal structures with TiN bottom and top electrodesusing the dopant Lu. Amorphous 5% Lu doped HfO2 was deposited by pulsed laser deposition andafterwards annealed to achieve the ferroelectric, orthorhombic phase (space group Pbc21). Thepolarization of the layers was confirmed by capacitance-voltage, polarization-voltage, and currentvoltagemeasurements. Depending on the anneal temperature, the remanent polarization changesand the initial state of the oxide varies. The layer exhibits initially a pinched hysteresis up to anannealing temperature of 600 °C and an unpinched hysteresis at 700 °C. The maximum polarizationis about 11 lC/cm2 which is measured after 104 cycles and stable up to 106 cycles. The influence ofthe layer thickness on the oxide properties is investigated for 10–40 nm thick HfLuO; however, athickness dependence of the ferroelectric properties is not observed. Published by AIP Publishing. |
536 | _ | _ | |a 521 - Controlling Electron Charge-Based Phenomena (POF3-521) |0 G:(DE-HGF)POF3-521 |c POF3-521 |f POF III |x 0 |
588 | _ | _ | |a Dataset connected to CrossRef |
700 | 1 | _ | |a Zhang, J. |0 P:(DE-Juel1)172738 |b 1 |u fzj |
700 | 1 | _ | |a Schubert, J. |0 P:(DE-Juel1)128631 |b 2 |
700 | 1 | _ | |a Luysberg, M. |0 P:(DE-Juel1)130811 |b 3 |u fzj |
700 | 1 | _ | |a Zander, W. |0 P:(DE-Juel1)128648 |b 4 |u fzj |
700 | 1 | _ | |a Han, Q. |0 P:(DE-Juel1)165600 |b 5 |u fzj |
700 | 1 | _ | |a Meuffels, P. |0 P:(DE-Juel1)130836 |b 6 |u fzj |
700 | 1 | _ | |a Meertens, D. |0 P:(DE-Juel1)130828 |b 7 |u fzj |
700 | 1 | _ | |a Glass, S. |0 P:(DE-Juel1)165997 |b 8 |
700 | 1 | _ | |a Bernardy, P. |0 P:(DE-Juel1)138772 |b 9 |u fzj |
700 | 1 | _ | |a Mantl, S. |0 P:(DE-Juel1)128609 |b 10 |u fzj |
773 | _ | _ | |a 10.1063/1.4998336 |g Vol. 111, no. 14, p. 142904 - |0 PERI:(DE-600)1469436-0 |n 14 |p 142904 - |t Applied physics letters |v 111 |y 2017 |x 1077-3118 |
856 | 4 | _ | |y Published on 2017-10-03. Available in OpenAccess from 2018-10-03. |u https://juser.fz-juelich.de/record/838129/files/APL-original.pdf |
856 | 4 | _ | |y Published on 2017-10-03. Available in OpenAccess from 2018-10-03. |x icon |u https://juser.fz-juelich.de/record/838129/files/APL-original.gif?subformat=icon |
856 | 4 | _ | |y Published on 2017-10-03. Available in OpenAccess from 2018-10-03. |x icon-1440 |u https://juser.fz-juelich.de/record/838129/files/APL-original.jpg?subformat=icon-1440 |
856 | 4 | _ | |y Published on 2017-10-03. Available in OpenAccess from 2018-10-03. |x icon-180 |u https://juser.fz-juelich.de/record/838129/files/APL-original.jpg?subformat=icon-180 |
856 | 4 | _ | |y Published on 2017-10-03. Available in OpenAccess from 2018-10-03. |x icon-640 |u https://juser.fz-juelich.de/record/838129/files/APL-original.jpg?subformat=icon-640 |
856 | 4 | _ | |y Published on 2017-10-03. Available in OpenAccess from 2018-10-03. |x pdfa |u https://juser.fz-juelich.de/record/838129/files/APL-original.pdf?subformat=pdfa |
909 | C | O | |o oai:juser.fz-juelich.de:838129 |p openaire |p open_access |p VDB |p driver |p dnbdelivery |
910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 0 |6 P:(DE-Juel1)165625 |
910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 1 |6 P:(DE-Juel1)172738 |
910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 2 |6 P:(DE-Juel1)128631 |
910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 3 |6 P:(DE-Juel1)130811 |
910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 4 |6 P:(DE-Juel1)128648 |
910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 5 |6 P:(DE-Juel1)165600 |
910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 6 |6 P:(DE-Juel1)130836 |
910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 7 |6 P:(DE-Juel1)130828 |
910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 8 |6 P:(DE-Juel1)165997 |
910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 9 |6 P:(DE-Juel1)138772 |
910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 10 |6 P:(DE-Juel1)128609 |
913 | 1 | _ | |a DE-HGF |b Key Technologies |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |1 G:(DE-HGF)POF3-520 |0 G:(DE-HGF)POF3-521 |2 G:(DE-HGF)POF3-500 |v Controlling Electron Charge-Based Phenomena |x 0 |4 G:(DE-HGF)POF |3 G:(DE-HGF)POF3 |
914 | 1 | _ | |y 2017 |
915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0200 |2 StatID |b SCOPUS |
915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0600 |2 StatID |b Ebsco Academic Search |
915 | _ | _ | |a Embargoed OpenAccess |0 StatID:(DE-HGF)0530 |2 StatID |
915 | _ | _ | |a JCR |0 StatID:(DE-HGF)0100 |2 StatID |b APPL PHYS LETT : 2015 |
915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0150 |2 StatID |b Web of Science Core Collection |
915 | _ | _ | |a WoS |0 StatID:(DE-HGF)0110 |2 StatID |b Science Citation Index |
915 | _ | _ | |a WoS |0 StatID:(DE-HGF)0111 |2 StatID |b Science Citation Index Expanded |
915 | _ | _ | |a IF < 5 |0 StatID:(DE-HGF)9900 |2 StatID |
915 | _ | _ | |a Peer Review |0 StatID:(DE-HGF)0030 |2 StatID |b ASC |
915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)1150 |2 StatID |b Current Contents - Physical, Chemical and Earth Sciences |
915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0300 |2 StatID |b Medline |
915 | _ | _ | |a Nationallizenz |0 StatID:(DE-HGF)0420 |2 StatID |
915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0199 |2 StatID |b Thomson Reuters Master Journal List |
920 | _ | _ | |l yes |
920 | 1 | _ | |0 I:(DE-Juel1)PGI-9-20110106 |k PGI-9 |l Halbleiter-Nanoelektronik |x 0 |
920 | 1 | _ | |0 I:(DE-Juel1)PGI-7-20110106 |k PGI-7 |l Elektronische Materialien |x 1 |
920 | 1 | _ | |0 I:(DE-Juel1)PGI-5-20110106 |k PGI-5 |l Mikrostrukturforschung |x 2 |
920 | 1 | _ | |0 I:(DE-82)080009_20140620 |k JARA-FIT |l JARA-FIT |x 3 |
920 | 1 | _ | |0 I:(DE-Juel1)ER-C-1-20170209 |k ER-C-1 |l Physik Nanoskaliger Systeme |x 4 |
980 | 1 | _ | |a FullTexts |
980 | _ | _ | |a journal |
980 | _ | _ | |a VDB |
980 | _ | _ | |a UNRESTRICTED |
980 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
980 | _ | _ | |a I:(DE-Juel1)PGI-7-20110106 |
980 | _ | _ | |a I:(DE-Juel1)PGI-5-20110106 |
980 | _ | _ | |a I:(DE-82)080009_20140620 |
980 | _ | _ | |a I:(DE-Juel1)ER-C-1-20170209 |
981 | _ | _ | |a I:(DE-Juel1)ER-C-1-20170209 |
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