TY  - JOUR
AU  - Arndt, Benedikt
AU  - Phillips, Monifa
AU  - Meiners, Thorsten
AU  - Menzel, Stephan
AU  - Skaja, Katharina
AU  - Dittmann, Regina
AU  - Parreira, Pedro
AU  - Offi, Francesco
AU  - Borgatti, Francesco
AU  - Waser, R.
AU  - Panaccione, Giancarlo
AU  - MacLaren, Donald A.
TI  - Spectroscopic Indications of Tunnel Barrier Charging as the Switching Mechanism in Memristive Devices
JO  - Advanced functional materials
VL  - 27
IS  - 45
SN  - 1616-301X
CY  - Weinheim
PB  - Wiley-VCH
M1  - FZJ-2017-07013
SP  - 1702282 -
PY  - 2017
AB  - Resistive random access memory is a promising, energy-efficient, low-power “storage class memory” technology that has the potential to replace both flash storage and on-chip dynamic memory. While the most widely employed systems exhibit filamentary resistive switching, interface-type switching systems based on a tunable tunnel barrier are of increasing interest. They suffer less from the variability induced by the stochastic filament formation process and the choice of the tunnel barrier thickness offers the possibility to adapt the memory device current to the given circuit requirements. Heterostructures consisting of a yttria-stabilized zirconia (YSZ) tunnel barrier and a praseodymium calcium manganite (PCMO) layer are employed. Instead of spatially localized filaments, the resistive switching process occurs underneath the whole electrode. By employing a combination of electrical measurements, in operando hard X-ray photoelectron spectroscopy and electron energy loss spectroscopy, it is revealed that an exchange of oxygen ions between PCMO and YSZ causes an electrostatic modulation of the effective height of the YSZ tunnel barrier and is thereby the underlying mechanism for resistive switching in these devices.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000416828500002
DO  - DOI:10.1002/adfm.201702282
UR  - https://juser.fz-juelich.de/record/838401
ER  -