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@ARTICLE{Arndt:838401,
      author       = {Arndt, Benedikt and Phillips, Monifa and Meiners, Thorsten
                      and Menzel, Stephan and Skaja, Katharina and Dittmann,
                      Regina and Parreira, Pedro and Offi, Francesco and Borgatti,
                      Francesco and Waser, R. and Panaccione, Giancarlo and
                      MacLaren, Donald A.},
      title        = {{S}pectroscopic {I}ndications of {T}unnel {B}arrier
                      {C}harging as the {S}witching {M}echanism in {M}emristive
                      {D}evices},
      journal      = {Advanced functional materials},
      volume       = {27},
      number       = {45},
      issn         = {1616-301X},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2017-07013},
      pages        = {1702282 -},
      year         = {2017},
      abstract     = {Resistive random access memory is a promising,
                      energy-efficient, low-power “storage class memory”
                      technology that has the potential to replace both flash
                      storage and on-chip dynamic memory. While the most widely
                      employed systems exhibit filamentary resistive switching,
                      interface-type switching systems based on a tunable tunnel
                      barrier are of increasing interest. They suffer less from
                      the variability induced by the stochastic filament formation
                      process and the choice of the tunnel barrier thickness
                      offers the possibility to adapt the memory device current to
                      the given circuit requirements. Heterostructures consisting
                      of a yttria-stabilized zirconia (YSZ) tunnel barrier and a
                      praseodymium calcium manganite (PCMO) layer are employed.
                      Instead of spatially localized filaments, the resistive
                      switching process occurs underneath the whole electrode. By
                      employing a combination of electrical measurements, in
                      operando hard X-ray photoelectron spectroscopy and electron
                      energy loss spectroscopy, it is revealed that an exchange of
                      oxygen ions between PCMO and YSZ causes an electrostatic
                      modulation of the effective height of the YSZ tunnel barrier
                      and is thereby the underlying mechanism for resistive
                      switching in these devices.},
      cin          = {PGI-7 / JARA-FIT},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000416828500002},
      doi          = {10.1002/adfm.201702282},
      url          = {https://juser.fz-juelich.de/record/838401},
}