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@PHDTHESIS{Kim:838779,
      author       = {Kim, Wonjoo},
      title        = {{I}nvestigation of switching mechanism in
                      {T}a$_{2}${O}$_{5}$-based {R}e{RAM} devices},
      volume       = {50},
      school       = {RWTH Aachen},
      type         = {Dissertation},
      address      = {Jülich},
      publisher    = {Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag},
      reportid     = {FZJ-2017-07303},
      isbn         = {978-3-95806-261-0},
      series       = {Schriften des Forschungszentrums Jülich. Reihe Information
                      / Information},
      pages        = {II, III, II, 138 S.},
      year         = {2017},
      note         = {RWTH Aachen, Diss., 2017},
      abstract     = {Redox-based Restive Random Access Memory (ReRAM) has
                      recently receivedstrong attention due to its potential
                      payout toward high density, low-cost,low-energy NVMs.
                      Development and understanding of Ta$_{2}$O$_{5}$ based ReRAM
                      devices in this research work have been made under following
                      experiments, (i)Ta$_{2}$O$_{5}$ switching layer, (ii) ohmic
                      electrode, (iii) Forming-free ReRAM devices, (iv)ReRAM and
                      MOSFET integration, and (v) implementation of modular
                      arithmetic function. In order to optimize the
                      Ta$_{2}$O$_{5}$ switching layer, various approaches such as
                      the effects of RF sputtering power in Ta$_{2}$O$_{5}$
                      deposition, the thickness effect of Ta$_{2}$O$_{5}$
                      switching layer, and the Bi-layer (Ta$_{2}$O$_{5}$
                      /TaO$_{x}$) structure have been made. The optimized 7
                      nm-thick Ta$_{2}$O$_{5}$ ReRAM device shows lower VFORM (1.8
                      V), reasonable V$_{S}$ET (0.8 V) with large memory window
                      (R$_{OFF}$ /R$_{ON}$ >300 at V$_{RESET−STOP}$ =-2.0 V),
                      stable endurance up to 106 cycles (@1.0 μs) and
                      goodretention at 125 $^{\circ}$C for 10$^{4}$ seconds.
                      Further, defect density in the switching oxide can also
                      affect the switching properties of ReRAM devices and a
                      modulation of defect density is possible by deposition rate
                      variation. The layer deposition rate changes depending on RF
                      sputtering power of Ta$_{2}$O$_{5}$ layer. The best RF power
                      condition (236W) at given layer thickness (7 nm) was found
                      in terms of memory window (R$_{OFF}$ /R$_{ON}$ > 800 at
                      V$_{RESET−STOP}$ = -2.2 V) with high reliability
                      (retention and endurance) performance. By introducing
                      optimal Bi-layer (Ta$_{2}$O$_{5}$ /TaO$_{x}$) stack in
                      Ta$_{2}$O$_{5}$ ReRAM device, the R$_{OFF}$ performance
                      further improves with 7.0 nm-thick Ta$_{2}$O$_{5}$ / 20
                      nm-thick TaO$_{x}$ at low I$_{CC}$ level (50 μA) due to a
                      better control of defects in the Ta$_{2}$O$_{5}$ switching
                      layer. However, the V$_{FORM}$ of the Bi-layer increases
                      from 1.8 V to 3.8 V in spite of highly conductive nature of
                      TaO$_{x}$ layer. [...]},
      cin          = {PGI-7},
      cid          = {I:(DE-Juel1)PGI-7-20110106},
      pnm          = {899 - ohne Topic (POF3-899)},
      pid          = {G:(DE-HGF)POF3-899},
      typ          = {PUB:(DE-HGF)3 / PUB:(DE-HGF)11},
      url          = {https://juser.fz-juelich.de/record/838779},
}