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| Hauptseite > Publikationsdatenbank > Investigation of switching mechanism in Ta$_{2}$O$_{5}$-based ReRAM devices > print |
| Hauptseite > Publikationsdatenbank > Investigation of switching mechanism in Ta$_{2}$O$_{5}$-based ReRAM devices > print |
| 001 | 838779 | ||
| 005 | 20230217105511.0 | ||
| 020 | _ | _ | |a 978-3-95806-261-0 |
| 024 | 7 | _ | |2 Handle |a 2128/16133 |
| 024 | 7 | _ | |2 ISSN |a 1866-1777 |
| 037 | _ | _ | |a FZJ-2017-07303 |
| 041 | _ | _ | |a English |
| 100 | 1 | _ | |0 P:(DE-Juel1)159348 |a Kim, Wonjoo |b 0 |e Corresponding author |u fzj |
| 245 | _ | _ | |a Investigation of switching mechanism in Ta$_{2}$O$_{5}$-based ReRAM devices |f - 2017-12-06 |
| 260 | _ | _ | |a Jülich |b Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag |c 2017 |
| 300 | _ | _ | |a II, III, II, 138 S. |
| 336 | 7 | _ | |2 DataCite |a Output Types/Dissertation |
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| 336 | 7 | _ | |2 BibTeX |a PHDTHESIS |
| 336 | 7 | _ | |0 2 |2 EndNote |a Thesis |
| 336 | 7 | _ | |0 PUB:(DE-HGF)11 |2 PUB:(DE-HGF) |a Dissertation / PhD Thesis |b phd |m phd |s 1512546354_21213 |
| 336 | 7 | _ | |2 DRIVER |a doctoralThesis |
| 490 | 0 | _ | |a Schriften des Forschungszentrums Jülich. Reihe Information / Information |v 50 |
| 502 | _ | _ | |a RWTH Aachen, Diss., 2017 |b Dissertation |c RWTH Aachen |d 2017 |
| 520 | _ | _ | |a Redox-based Restive Random Access Memory (ReRAM) has recently receivedstrong attention due to its potential payout toward high density, low-cost,low-energy NVMs. Development and understanding of Ta$_{2}$O$_{5}$ based ReRAM devices in this research work have been made under following experiments, (i)Ta$_{2}$O$_{5}$ switching layer, (ii) ohmic electrode, (iii) Forming-free ReRAM devices, (iv)ReRAM and MOSFET integration, and (v) implementation of modular arithmetic function. In order to optimize the Ta$_{2}$O$_{5}$ switching layer, various approaches such as the effects of RF sputtering power in Ta$_{2}$O$_{5}$ deposition, the thickness effect of Ta$_{2}$O$_{5}$ switching layer, and the Bi-layer (Ta$_{2}$O$_{5}$ /TaO$_{x}$) structure have been made. The optimized 7 nm-thick Ta$_{2}$O$_{5}$ ReRAM device shows lower VFORM (1.8 V), reasonable V$_{S}$ET (0.8 V) with large memory window (R$_{OFF}$ /R$_{ON}$ >300 at V$_{RESET−STOP}$ =-2.0 V), stable endurance up to 106 cycles (@1.0 μs) and goodretention at 125 $^{\circ}$C for 10$^{4}$ seconds. Further, defect density in the switching oxide can also affect the switching properties of ReRAM devices and a modulation of defect density is possible by deposition rate variation. The layer deposition rate changes depending on RF sputtering power of Ta$_{2}$O$_{5}$ layer. The best RF power condition (236W) at given layer thickness (7 nm) was found in terms of memory window (R$_{OFF}$ /R$_{ON}$ > 800 at V$_{RESET−STOP}$ = -2.2 V) with high reliability (retention and endurance) performance. By introducing optimal Bi-layer (Ta$_{2}$O$_{5}$ /TaO$_{x}$) stack in Ta$_{2}$O$_{5}$ ReRAM device, the R$_{OFF}$ performance further improves with 7.0 nm-thick Ta$_{2}$O$_{5}$ / 20 nm-thick TaO$_{x}$ at low I$_{CC}$ level (50 μA) due to a better control of defects in the Ta$_{2}$O$_{5}$ switching layer. However, the V$_{FORM}$ of the Bi-layer increases from 1.8 V to 3.8 V in spite of highly conductive nature of TaO$_{x}$ layer. [...] |
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