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@PHDTHESIS{Sforzini:838780,
      author       = {Sforzini, Jessica},
      title        = {{T}he influence of the substrate on the structure and
                      electronic properties of carbon-based 2{D} materials},
      volume       = {153},
      school       = {RWTH Aachen},
      type         = {Dr.},
      address      = {Jülich},
      publisher    = {Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag},
      reportid     = {FZJ-2017-07304},
      isbn         = {978-3-95806-255-9},
      series       = {Schriften des Forschungszentrums Jülich. Reihe
                      Schlüsseltechnologien / Key Technologies},
      pages        = {XIII, 143 S.},
      year         = {2017},
      note         = {RWTH Aachen, Diss., 2017},
      abstract     = {The exploration of two-dimensional (2D) materials, such as
                      graphene, has become the hottest research of interest in
                      recent years because they offer the possibility to create
                      more efficient, smaller and cost-effective nano-devices. In
                      order to realize potential applications of 2D materials in
                      the areas of electronics and optoelectronics, there are many
                      challenges associated with their electronic and structural
                      behavior, which require the understanding of the
                      interactions at 2D materials interfaces. With this in mind,
                      the goal of this thesis was to assess interactions between
                      various 2D layers and substrates, of interest for both
                      fundamental studies and industrial applications, by studying
                      the modification of the layer electronic and structural
                      properties in relation to the supporting substrate using
                      different surface science techniques. In particular,
                      interactions residing at graphene/6H-SiC(0001) interfaces
                      were considered. At first, a new approach used to gauge the
                      strength of these interactions was presented based on the
                      determination of the graphene adsorption height with respect
                      to the H-intercalated SiC substrate. By comparing this value
                      with the graphene vertical distance of different
                      graphene/substrate systems, we found H-intercalated graphene
                      (H-QFMLG) free of interactions besides van der Waals,
                      indicating that the effect of the underlying H-intercalated
                      SiC on graphene was almost non existent. The influence of
                      this substrate on the structural and electronic properties
                      of graphene was further investigated upon nitrogen doping in
                      comparison to the carbon buffer layer terminated SiC in
                      epitaxial graphene (EMLG). The outcome was that both
                      graphene layers showed a similar n-type carrier increase but
                      a dissimilar concentration and variety of dopants
                      substituted into the graphene layers leading to the main
                      conclusion that the effective doping of graphene was
                      surprisingly dependent on the supporting material. In the
                      case of H-QFMLG, the nitrogen dopants were found partially
                      replacing the hydrogen intercalation at the interface, which
                      in turn became N-doped contributing to the graphene doping
                      (’proximity doping’) but degrading the graphene layer in
                      terms of buckling and interface interactions. On
                      thecontrary, the buffer layer in EMLG was found inert
                      allowing a multicomponent substitution of the nitrogen
                      dopants into graphene. Howver, ths was not the case for
                      boron-doped EMLG, for which boron was found in one chemical
                      configuration and in both buffer layer and graphene. In the
                      last part of the thesis, the focus was laid on the study of
                      physical phenomena that occur at organic/metal interfaces.
                      Specifically, the molecular symmetry reduction (from the D4h
                      symmetry group) via degeneracy lifting of the platinum- and
                      palladium-phthalocyanine/Ag(111) complexes was investigated
                      using vibrational spectroscopy. Because of the presence of
                      an interfacial dynamical charge transfer, some vibrational
                      peaks showed a Fano-type line shape. By their assignment to
                      vibrational modes which were infrared active only in the
                      C$_{2v}$ symmetry group, we proved that a preferential
                      charge transfer from the Ag surface into one of the
                      originally doubly degenerate lowest unoccupied molecular
                      orbitals took place, i.e. the electronic degeneracy was
                      lifted and the molecule-surface complex acquired the twofold
                      symmetry.},
      cin          = {PGI-3},
      cid          = {I:(DE-Juel1)PGI-3-20110106},
      pnm          = {899 - ohne Topic (POF3-899)},
      pid          = {G:(DE-HGF)POF3-899},
      typ          = {PUB:(DE-HGF)3 / PUB:(DE-HGF)11},
      urn          = {urn:nbn:de:0001-2017120701},
      url          = {https://juser.fz-juelich.de/record/838780},
}