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000838818 1001_ $$0P:(DE-HGF)0$$aSchmidt, Dirk$$b0
000838818 245__ $$aResistive Switching of Sub-10 nm TiO2 Nanoparticle Self-Assembled Monolayers
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000838818 520__ $$aResistively switching devices are promising candidates for the next generation of non-volatile data memories. Such devices are up to now fabricated mainly by means of top-down approaches that apply thin films sandwiched between electrodes. Recent works have demonstrated that resistive switching (RS) is also feasible on chemically synthesized nanoparticles (NPs) in the 50 nm range. Following this concept, we developed this approach further to the sub-10 nm range. In this work, we report RS of sub-10 nm TiO2 NPs that were self-assembled into monolayers and transferred onto metallic substrates. We electrically characterized these monolayers in regard to their RS properties by means of a nanorobotics system in a scanning electron microscope, and found features typical of bipolar resistive switching
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000838818 7001_ $$0P:(DE-Juel1)157925$$aRaab, Nicolas$$b1
000838818 7001_ $$0P:(DE-HGF)0$$aNoyong, Michael$$b2
000838818 7001_ $$0P:(DE-HGF)0$$aSanthanam, Venugopal$$b3
000838818 7001_ $$0P:(DE-Juel1)130620$$aDittmann, Regina$$b4
000838818 7001_ $$0P:(DE-HGF)0$$aSimon, Ulrich$$b5$$eCorresponding author
000838818 773__ $$0PERI:(DE-600)2662255-5$$a10.3390/nano7110370$$gVol. 7, no. 11, p. 370 -$$n11$$p370 $$tNanomaterials$$v7$$x2079-4991$$y2017
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