TY  - JOUR
AU  - Schmidt, Dirk
AU  - Raab, Nicolas
AU  - Noyong, Michael
AU  - Santhanam, Venugopal
AU  - Dittmann, Regina
AU  - Simon, Ulrich
TI  - Resistive Switching of Sub-10 nm TiO2 Nanoparticle Self-Assembled Monolayers
JO  - Nanomaterials
VL  - 7
IS  - 11
SN  - 2079-4991
CY  - Basel
PB  - MDPI
M1  - FZJ-2017-07330
SP  - 370 
PY  - 2017
AB  - Resistively switching devices are promising candidates for the next generation of non-volatile data memories. Such devices are up to now fabricated mainly by means of top-down approaches that apply thin films sandwiched between electrodes. Recent works have demonstrated that resistive switching (RS) is also feasible on chemically synthesized nanoparticles (NPs) in the 50 nm range. Following this concept, we developed this approach further to the sub-10 nm range. In this work, we report RS of sub-10 nm TiO2 NPs that were self-assembled into monolayers and transferred onto metallic substrates. We electrically characterized these monolayers in regard to their RS properties by means of a nanorobotics system in a scanning electron microscope, and found features typical of bipolar resistive switching
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000416783800025
C6  - pmid:29113050
DO  - DOI:10.3390/nano7110370
UR  - https://juser.fz-juelich.de/record/838818
ER  -