% IMPORTANT: The following is UTF-8 encoded. This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.
@ARTICLE{Schmidt:838818,
author = {Schmidt, Dirk and Raab, Nicolas and Noyong, Michael and
Santhanam, Venugopal and Dittmann, Regina and Simon, Ulrich},
title = {{R}esistive {S}witching of {S}ub-10 nm {T}i{O}2
{N}anoparticle {S}elf-{A}ssembled {M}onolayers},
journal = {Nanomaterials},
volume = {7},
number = {11},
issn = {2079-4991},
address = {Basel},
publisher = {MDPI},
reportid = {FZJ-2017-07330},
pages = {370},
year = {2017},
abstract = {Resistively switching devices are promising candidates for
the next generation of non-volatile data memories. Such
devices are up to now fabricated mainly by means of top-down
approaches that apply thin films sandwiched between
electrodes. Recent works have demonstrated that resistive
switching (RS) is also feasible on chemically synthesized
nanoparticles (NPs) in the 50 nm range. Following this
concept, we developed this approach further to the sub-10 nm
range. In this work, we report RS of sub-10 nm TiO2 NPs that
were self-assembled into monolayers and transferred onto
metallic substrates. We electrically characterized these
monolayers in regard to their RS properties by means of a
nanorobotics system in a scanning electron microscope, and
found features typical of bipolar resistive switching},
cin = {PGI-7 / JARA-FIT},
ddc = {570},
cid = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
pnm = {521 - Controlling Electron Charge-Based Phenomena
(POF3-521)},
pid = {G:(DE-HGF)POF3-521},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000416783800025},
pubmed = {pmid:29113050},
doi = {10.3390/nano7110370},
url = {https://juser.fz-juelich.de/record/838818},
}