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@ARTICLE{LaTorre:838875,
      author       = {La Torre, Camilla and Kindsmüller, Andreas and Wouters,
                      Dirk J. and Graves, Catherine E. and Gibson, Gary A. and
                      Strachan, John Paul and Williams, R. Stanley and Waser, R.
                      and Menzel, Stephan},
      title        = {{V}olatile {HRS} asymmetry and subloops in resistive
                      switching oxides},
      journal      = {Nanoscale},
      volume       = {9},
      number       = {38},
      issn         = {2040-3372},
      address      = {Cambridge},
      publisher    = {RSC Publ.},
      reportid     = {FZJ-2017-07381},
      pages        = {14414 - 14422},
      year         = {2017},
      abstract     = {Current–voltage characteristics of oxide-based resistive
                      switching memories often show a pronounced asymmetry with
                      respect to the voltage polarity in the high resistive state
                      (HRS), where the HRS after the RESET is more conducting than
                      the one before the SET. Here, we report that most of this
                      HRS asymmetry is a volatile effect as the HRS obtained from
                      a read operation differs from the one taken from the
                      switching cycle at identical polarity and voltages.
                      Transitions between the relaxed and the volatile excited
                      states can be achieved via voltage sweeps, which are named
                      subloops. The excited states are stable over time as long as
                      a voltage is applied to the device and have a higher
                      conductance than the stable relaxed state. Experimental data
                      on the time and voltage dependence of the excitation and
                      decay are presented for Ta/TaOx/Pt and Ta/ZrOx/Pt devices.
                      The effect is not limited to one oxide or electrode material
                      but is observed with different magnitudes (up to 10×
                      current change) in several oxide systems. These observations
                      describe an additional state variable of the memristive
                      system that is controlled in a highly polarity dependent
                      manner.},
      cin          = {PGI-7 / JARA-FIT},
      ddc          = {600},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:28920125},
      UT           = {WOS:000412407300014},
      doi          = {10.1039/C7NR04896C},
      url          = {https://juser.fz-juelich.de/record/838875},
}