%0 Journal Article
%A Schönhals, Alexander
%A Waser, R.
%A Wouters, Dirk J
%T Improvement of SET variability in TaO x based resistive RAM devices
%J Nanotechnology
%V 28
%N 46
%@ 1361-6528
%C Bristol
%I IOP Publ.
%M FZJ-2017-07383
%P 465203 -
%D 2017
%X Improvement or at least control of variability is one of the key challenges for Redox based resistive switching memory technology. In this paper, we investigate the impact of a serial resistor as a voltage divider on the SET variability in Pt/Ta2O5/Ta/Pt nano crossbar devices. A partial RESET in a competing complementary switching (CS) mode is identified as a possible failure mechanism of bipolar switching SET in our devices. Due to a voltage divider effect, serial resistance value shows unequal impact on switching voltages of both modes which allows for a selective suppression of the CS mode. The impact of voltage divider on SET variability is demonstrated. A combination of appropriate write voltage and serial resistance allows for a significant improvement of the SET variability
%F PUB:(DE-HGF)16
%9 Journal Article
%$ pmid:29059050
%U <Go to ISI:>//WOS:000413574200001
%R 10.1088/1361-6528/aa8f89
%U https://juser.fz-juelich.de/record/838877