000838877 001__ 838877
000838877 005__ 20210129231649.0
000838877 0247_ $$2doi$$a10.1088/1361-6528/aa8f89
000838877 0247_ $$2ISSN$$a0957-4484
000838877 0247_ $$2ISSN$$a1361-6528
000838877 0247_ $$2pmid$$apmid:29059050
000838877 0247_ $$2WOS$$aWOS:000413574200001
000838877 037__ $$aFZJ-2017-07383
000838877 082__ $$a530
000838877 1001_ $$00000-0003-0118-6321$$aSchönhals, Alexander$$b0$$eCorresponding author
000838877 245__ $$aImprovement of SET variability in TaO x based resistive RAM devices
000838877 260__ $$aBristol$$bIOP Publ.$$c2017
000838877 3367_ $$2DRIVER$$aarticle
000838877 3367_ $$2DataCite$$aOutput Types/Journal article
000838877 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1510320558_27061
000838877 3367_ $$2BibTeX$$aARTICLE
000838877 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000838877 3367_ $$00$$2EndNote$$aJournal Article
000838877 520__ $$aImprovement or at least control of variability is one of the key challenges for Redox based resistive switching memory technology. In this paper, we investigate the impact of a serial resistor as a voltage divider on the SET variability in Pt/Ta2O5/Ta/Pt nano crossbar devices. A partial RESET in a competing complementary switching (CS) mode is identified as a possible failure mechanism of bipolar switching SET in our devices. Due to a voltage divider effect, serial resistance value shows unequal impact on switching voltages of both modes which allows for a selective suppression of the CS mode. The impact of voltage divider on SET variability is demonstrated. A combination of appropriate write voltage and serial resistance allows for a significant improvement of the SET variability
000838877 536__ $$0G:(DE-HGF)POF3-521$$a521 - Controlling Electron Charge-Based Phenomena (POF3-521)$$cPOF3-521$$fPOF III$$x0
000838877 588__ $$aDataset connected to CrossRef
000838877 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b1
000838877 7001_ $$0P:(DE-HGF)0$$aWouters, Dirk J$$b2$$eCorresponding author
000838877 773__ $$0PERI:(DE-600)1362365-5$$a10.1088/1361-6528/aa8f89$$gVol. 28, no. 46, p. 465203 -$$n46$$p465203 -$$tNanotechnology$$v28$$x1361-6528$$y2017
000838877 8564_ $$uhttps://juser.fz-juelich.de/record/838877/files/Sch%C3%B6nhals_2017_Nanotechnology_28_465203.pdf$$yRestricted
000838877 8564_ $$uhttps://juser.fz-juelich.de/record/838877/files/Sch%C3%B6nhals_2017_Nanotechnology_28_465203.pdf?subformat=pdfa$$xpdfa$$yRestricted
000838877 909CO $$ooai:juser.fz-juelich.de:838877$$pVDB
000838877 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)131022$$aForschungszentrum Jülich$$b1$$kFZJ
000838877 9131_ $$0G:(DE-HGF)POF3-521$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Electron Charge-Based Phenomena$$x0
000838877 9141_ $$y2017
000838877 915__ $$0StatID:(DE-HGF)0420$$2StatID$$aNationallizenz
000838877 915__ $$0StatID:(DE-HGF)0430$$2StatID$$aNational-Konsortium
000838877 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR$$bNANOTECHNOLOGY : 2015
000838877 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000838877 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000838877 915__ $$0StatID:(DE-HGF)0310$$2StatID$$aDBCoverage$$bNCBI Molecular Biology Database
000838877 915__ $$0StatID:(DE-HGF)0600$$2StatID$$aDBCoverage$$bEbsco Academic Search
000838877 915__ $$0StatID:(DE-HGF)0030$$2StatID$$aPeer Review$$bASC
000838877 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000838877 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000838877 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000838877 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000838877 915__ $$0StatID:(DE-HGF)1150$$2StatID$$aDBCoverage$$bCurrent Contents - Physical, Chemical and Earth Sciences
000838877 915__ $$0StatID:(DE-HGF)1160$$2StatID$$aDBCoverage$$bCurrent Contents - Engineering, Computing and Technology
000838877 915__ $$0StatID:(DE-HGF)9900$$2StatID$$aIF < 5
000838877 9201_ $$0I:(DE-Juel1)PGI-7-20110106$$kPGI-7$$lElektronische Materialien$$x0
000838877 9201_ $$0I:(DE-82)080009_20140620$$kJARA-FIT$$lJARA-FIT$$x1
000838877 980__ $$ajournal
000838877 980__ $$aVDB
000838877 980__ $$aI:(DE-Juel1)PGI-7-20110106
000838877 980__ $$aI:(DE-82)080009_20140620
000838877 980__ $$aUNRESTRICTED