TY  - JOUR
AU  - Schönhals, Alexander
AU  - Waser, R.
AU  - Wouters, Dirk J
TI  - Improvement of SET variability in TaO x based resistive RAM devices
JO  - Nanotechnology
VL  - 28
IS  - 46
SN  - 1361-6528
CY  - Bristol
PB  - IOP Publ.
M1  - FZJ-2017-07383
SP  - 465203 -
PY  - 2017
AB  - Improvement or at least control of variability is one of the key challenges for Redox based resistive switching memory technology. In this paper, we investigate the impact of a serial resistor as a voltage divider on the SET variability in Pt/Ta2O5/Ta/Pt nano crossbar devices. A partial RESET in a competing complementary switching (CS) mode is identified as a possible failure mechanism of bipolar switching SET in our devices. Due to a voltage divider effect, serial resistance value shows unequal impact on switching voltages of both modes which allows for a selective suppression of the CS mode. The impact of voltage divider on SET variability is demonstrated. A combination of appropriate write voltage and serial resistance allows for a significant improvement of the SET variability
LB  - PUB:(DE-HGF)16
C6  - pmid:29059050
UR  - <Go to ISI:>//WOS:000413574200001
DO  - DOI:10.1088/1361-6528/aa8f89
UR  - https://juser.fz-juelich.de/record/838877
ER  -