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@ARTICLE{Schnhals:838877,
author = {Schönhals, Alexander and Waser, R. and Wouters, Dirk J},
title = {{I}mprovement of {SET} variability in {T}a{O} x based
resistive {RAM} devices},
journal = {Nanotechnology},
volume = {28},
number = {46},
issn = {1361-6528},
address = {Bristol},
publisher = {IOP Publ.},
reportid = {FZJ-2017-07383},
pages = {465203 -},
year = {2017},
abstract = {Improvement or at least control of variability is one of
the key challenges for Redox based resistive switching
memory technology. In this paper, we investigate the impact
of a serial resistor as a voltage divider on the SET
variability in Pt/Ta2O5/Ta/Pt nano crossbar devices. A
partial RESET in a competing complementary switching (CS)
mode is identified as a possible failure mechanism of
bipolar switching SET in our devices. Due to a voltage
divider effect, serial resistance value shows unequal impact
on switching voltages of both modes which allows for a
selective suppression of the CS mode. The impact of voltage
divider on SET variability is demonstrated. A combination of
appropriate write voltage and serial resistance allows for a
significant improvement of the SET variability},
cin = {PGI-7 / JARA-FIT},
ddc = {530},
cid = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
pnm = {521 - Controlling Electron Charge-Based Phenomena
(POF3-521)},
pid = {G:(DE-HGF)POF3-521},
typ = {PUB:(DE-HGF)16},
pubmed = {pmid:29059050},
UT = {WOS:000413574200001},
doi = {10.1088/1361-6528/aa8f89},
url = {https://juser.fz-juelich.de/record/838877},
}