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| Home > Publications database > Improvement of SET variability in TaO x based resistive RAM devices > print |
| 001 | 838877 | ||
| 005 | 20210129231649.0 | ||
| 024 | 7 | _ | |a 10.1088/1361-6528/aa8f89 |2 doi |
| 024 | 7 | _ | |a 0957-4484 |2 ISSN |
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| 037 | _ | _ | |a FZJ-2017-07383 |
| 082 | _ | _ | |a 530 |
| 100 | 1 | _ | |a Schönhals, Alexander |0 0000-0003-0118-6321 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Improvement of SET variability in TaO x based resistive RAM devices |
| 260 | _ | _ | |a Bristol |c 2017 |b IOP Publ. |
| 336 | 7 | _ | |a article |2 DRIVER |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1510320558_27061 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
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| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 520 | _ | _ | |a Improvement or at least control of variability is one of the key challenges for Redox based resistive switching memory technology. In this paper, we investigate the impact of a serial resistor as a voltage divider on the SET variability in Pt/Ta2O5/Ta/Pt nano crossbar devices. A partial RESET in a competing complementary switching (CS) mode is identified as a possible failure mechanism of bipolar switching SET in our devices. Due to a voltage divider effect, serial resistance value shows unequal impact on switching voltages of both modes which allows for a selective suppression of the CS mode. The impact of voltage divider on SET variability is demonstrated. A combination of appropriate write voltage and serial resistance allows for a significant improvement of the SET variability |
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| 588 | _ | _ | |a Dataset connected to CrossRef |
| 700 | 1 | _ | |a Waser, R. |0 P:(DE-Juel1)131022 |b 1 |
| 700 | 1 | _ | |a Wouters, Dirk J |0 P:(DE-HGF)0 |b 2 |e Corresponding author |
| 773 | _ | _ | |a 10.1088/1361-6528/aa8f89 |g Vol. 28, no. 46, p. 465203 - |0 PERI:(DE-600)1362365-5 |n 46 |p 465203 - |t Nanotechnology |v 28 |y 2017 |x 1361-6528 |
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