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@PHDTHESIS{Pomaska:840071,
author = {Pomaska, Manuel},
title = {{M}icrocrystalline {S}ilicon {C}arbide for {S}ilicon
{H}eterojunction {S}olar {C}ells},
volume = {392},
school = {RWTH Aachen},
type = {Dissertation},
address = {Jülich},
publisher = {Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag},
reportid = {FZJ-2017-07635},
isbn = {978-3-95806-267-2},
series = {Schriften des Forschungszentrums Jülich Reihe Energie $\&$
Umwelt / Energy $\&$ Environment},
pages = {150 S.},
year = {2017},
note = {RWTH Aachen, Diss., 2017},
abstract = {N-type microcrystalline silicon carbide ($\mu$c-SiC:H(n))
is a promising material for the doped layer on the
illuminated side of silicon heterojunction (SHJ) solar
cells, because it offers a combination of large bandgap for
high optical transparency and suitable refractive index for
low reflection. Moreover, both optical properties can be
provided at sufficiently high electrical conductivity in
order to minimize electrical resistance losses. However, two
issues needed to be overcome for a successful implementation
of $\mu$c-SiC:H(n) in SHJ solar cells. First, the
opto-electrical properties of the $\mu$c-SiC:H(n) films were
suffering from reproducibility problems in the past. A
deeper understanding of the relation between microstructure,
electrical conductivity and optical transparency was
necessary. Second, it was still unclear, if the required
growth conditions for the high quality $\mu$c-SiC:H(n) are
compatible with maintaining high passivation quality of the
silicon wafer surfaces. A high hydrogen dilution during the
film growth is necessary to provide the promising
opto-electrical properties, but the common passivation
layers of intrinsic amorphous silicon suffer from severe
deterioration due to hydrogen etching. A systematic
adaptation of the $\mu$c-SiC:H(n) growth conditions and the
development of a suitable passivation layer were missing so
far. The material properties and process parameters of
$\mu$c-SiC:H(n) films were studied in detail in this thesis.
The $\mu$c-SiC:H(n) films were grown by hot wire chemical
vapor deposition (HWCVD) as well as by plasma enhanced
chemical vapor deposition (PECVD). The relations of
crystalline grain size in $\mu$c-SiC:H(n) with deposition
rate, electrical conductivity, hydrogen content, carbon
fraction, and optical absorption coefficient were
investigated. The impact of oxygen and nitrogen doping on
optical and electrical properties were investigated
separately. In particular, their influence on [...]},
cin = {IEK-5},
cid = {I:(DE-Juel1)IEK-5-20101013},
pnm = {121 - Solar cells of the next generation (POF3-121) / HITEC
- Helmholtz Interdisciplinary Doctoral Training in Energy
and Climate Research (HITEC) (HITEC-20170406)},
pid = {G:(DE-HGF)POF3-121 / G:(DE-Juel1)HITEC-20170406},
typ = {PUB:(DE-HGF)3 / PUB:(DE-HGF)11},
url = {https://juser.fz-juelich.de/record/840071},
}