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@PHDTHESIS{Pomaska:840071,
      author       = {Pomaska, Manuel},
      title        = {{M}icrocrystalline {S}ilicon {C}arbide for {S}ilicon
                      {H}eterojunction {S}olar {C}ells},
      volume       = {392},
      school       = {RWTH Aachen},
      type         = {Dissertation},
      address      = {Jülich},
      publisher    = {Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag},
      reportid     = {FZJ-2017-07635},
      isbn         = {978-3-95806-267-2},
      series       = {Schriften des Forschungszentrums Jülich Reihe Energie $\&$
                      Umwelt / Energy $\&$ Environment},
      pages        = {150 S.},
      year         = {2017},
      note         = {RWTH Aachen, Diss., 2017},
      abstract     = {N-type microcrystalline silicon carbide ($\mu$c-SiC:H(n))
                      is a promising material for the doped layer on the
                      illuminated side of silicon heterojunction (SHJ) solar
                      cells, because it offers a combination of large bandgap for
                      high optical transparency and suitable refractive index for
                      low reflection. Moreover, both optical properties can be
                      provided at sufficiently high electrical conductivity in
                      order to minimize electrical resistance losses. However, two
                      issues needed to be overcome for a successful implementation
                      of $\mu$c-SiC:H(n) in SHJ solar cells. First, the
                      opto-electrical properties of the $\mu$c-SiC:H(n) films were
                      suffering from reproducibility problems in the past. A
                      deeper understanding of the relation between microstructure,
                      electrical conductivity and optical transparency was
                      necessary. Second, it was still unclear, if the required
                      growth conditions for the high quality $\mu$c-SiC:H(n) are
                      compatible with maintaining high passivation quality of the
                      silicon wafer surfaces. A high hydrogen dilution during the
                      film growth is necessary to provide the promising
                      opto-electrical properties, but the common passivation
                      layers of intrinsic amorphous silicon suffer from severe
                      deterioration due to hydrogen etching. A systematic
                      adaptation of the $\mu$c-SiC:H(n) growth conditions and the
                      development of a suitable passivation layer were missing so
                      far. The material properties and process parameters of
                      $\mu$c-SiC:H(n) films were studied in detail in this thesis.
                      The $\mu$c-SiC:H(n) films were grown by hot wire chemical
                      vapor deposition (HWCVD) as well as by plasma enhanced
                      chemical vapor deposition (PECVD). The relations of
                      crystalline grain size in $\mu$c-SiC:H(n) with deposition
                      rate, electrical conductivity, hydrogen content, carbon
                      fraction, and optical absorption coefficient were
                      investigated. The impact of oxygen and nitrogen doping on
                      optical and electrical properties were investigated
                      separately. In particular, their influence on [...]},
      cin          = {IEK-5},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {121 - Solar cells of the next generation (POF3-121) / HITEC
                      - Helmholtz Interdisciplinary Doctoral Training in Energy
                      and Climate Research (HITEC) (HITEC-20170406)},
      pid          = {G:(DE-HGF)POF3-121 / G:(DE-Juel1)HITEC-20170406},
      typ          = {PUB:(DE-HGF)3 / PUB:(DE-HGF)11},
      url          = {https://juser.fz-juelich.de/record/840071},
}