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| Hauptseite > Publikationsdatenbank > Microcrystalline Silicon Carbide for Silicon Heterojunction Solar Cells > print |
| Hauptseite > Publikationsdatenbank > Microcrystalline Silicon Carbide for Silicon Heterojunction Solar Cells > print |
| 001 | 840071 | ||
| 005 | 20240712084501.0 | ||
| 020 | _ | _ | |a 978-3-95806-267-2 |
| 024 | 7 | _ | |2 Handle |a 2128/15923 |
| 024 | 7 | _ | |2 ISSN |a 1866-1793 |
| 037 | _ | _ | |a FZJ-2017-07635 |
| 041 | _ | _ | |a English |
| 100 | 1 | _ | |0 P:(DE-Juel1)162141 |a Pomaska, Manuel |b 0 |e Corresponding author |g male |u fzj |
| 245 | _ | _ | |a Microcrystalline Silicon Carbide for Silicon Heterojunction Solar Cells |f - 2017-09-29 |
| 260 | _ | _ | |a Jülich |b Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag |c 2017 |
| 300 | _ | _ | |a 150 S. |
| 336 | 7 | _ | |2 DataCite |a Output Types/Dissertation |
| 336 | 7 | _ | |0 PUB:(DE-HGF)3 |2 PUB:(DE-HGF) |a Book |m book |
| 336 | 7 | _ | |2 ORCID |a DISSERTATION |
| 336 | 7 | _ | |2 BibTeX |a PHDTHESIS |
| 336 | 7 | _ | |0 2 |2 EndNote |a Thesis |
| 336 | 7 | _ | |0 PUB:(DE-HGF)11 |2 PUB:(DE-HGF) |a Dissertation / PhD Thesis |b phd |m phd |s 1511331795_14129 |
| 336 | 7 | _ | |2 DRIVER |a doctoralThesis |
| 490 | 0 | _ | |a Schriften des Forschungszentrums Jülich Reihe Energie & Umwelt / Energy & Environment |v 392 |
| 502 | _ | _ | |a RWTH Aachen, Diss., 2017 |b Dissertation |c RWTH Aachen |d 2017 |
| 520 | _ | _ | |a N-type microcrystalline silicon carbide ($\mu$c-SiC:H(n)) is a promising material for the doped layer on the illuminated side of silicon heterojunction (SHJ) solar cells, because it offers a combination of large bandgap for high optical transparency and suitable refractive index for low reflection. Moreover, both optical properties can be provided at sufficiently high electrical conductivity in order to minimize electrical resistance losses. However, two issues needed to be overcome for a successful implementation of $\mu$c-SiC:H(n) in SHJ solar cells. First, the opto-electrical properties of the $\mu$c-SiC:H(n) films were suffering from reproducibility problems in the past. A deeper understanding of the relation between microstructure, electrical conductivity and optical transparency was necessary. Second, it was still unclear, if the required growth conditions for the high quality $\mu$c-SiC:H(n) are compatible with maintaining high passivation quality of the silicon wafer surfaces. A high hydrogen dilution during the film growth is necessary to provide the promising opto-electrical properties, but the common passivation layers of intrinsic amorphous silicon suffer from severe deterioration due to hydrogen etching. A systematic adaptation of the $\mu$c-SiC:H(n) growth conditions and the development of a suitable passivation layer were missing so far. The material properties and process parameters of $\mu$c-SiC:H(n) films were studied in detail in this thesis. The $\mu$c-SiC:H(n) films were grown by hot wire chemical vapor deposition (HWCVD) as well as by plasma enhanced chemical vapor deposition (PECVD). The relations of crystalline grain size in $\mu$c-SiC:H(n) with deposition rate, electrical conductivity, hydrogen content, carbon fraction, and optical absorption coefficient were investigated. The impact of oxygen and nitrogen doping on optical and electrical properties were investigated separately. In particular, their influence on [...] |
| 536 | _ | _ | |0 G:(DE-HGF)POF3-121 |a 121 - Solar cells of the next generation (POF3-121) |c POF3-121 |f POF III |x 0 |
| 536 | _ | _ | |0 G:(DE-Juel1)HITEC-20170406 |x 1 |c HITEC-20170406 |a HITEC - Helmholtz Interdisciplinary Doctoral Training in Energy and Climate Research (HITEC) (HITEC-20170406) |
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