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@MASTERSTHESIS{Kumar:840073,
author = {Kumar, Shashank},
title = {{A}ssessment of changes in the electro-optical performance
of {S}ilicon {P}hotomultiplier ({S}i{PM}) modules after
irradiation with cold neutrons},
volume = {4404},
school = {Duisburg Univ.},
type = {Masterarbeit},
address = {Jülich},
publisher = {Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag},
reportid = {FZJ-2017-07637, Juel-4404},
series = {Berichte des Forschungszentrums Jülich},
pages = {65 p.},
year = {2017},
note = {Masterarbeit, Duisburg Univ., 2017},
abstract = {The detection and measurement of neutrons are vital in a
wide range of fields including homeland security, radiation
protection and scientific research. Small-angle neutron
scattering (SANS) experiments have become important
techniques in the investigation of the material properties
on the atomic scale. For a long period $^{3}$He based
detectors were extensively used for neutron detection in
these experiments, but due to the scarcity of $^{3}$He,
researchers started to look for alternatives. Scintillation
based solid state detectors appeared as a prominent
alternative. A neutron scattered by a sample under test
impinges a scintillating material and initiates a nuclear
reaction that produces secondary particles which in a second
scattering process generate a light emission that can be
detected by an underlying photodetector. By determining the
neutron scattering angle, the momentum transfer of the
scattered neutron can be identified. Using this information
the investigated sample structure can be determined with
very high spatial resolution. These experiments using
scintillation based detectors rely on efficient detection of
photons, hence on the performance of photodetectors. Silicon
photomultipliers (SiPM), having lower bias voltages compared
to photomultiplier tubes (PMTs), being able to operate in
high magnetic fields, offering the possibility of modular
design, and yielding higher readout rates have the potential
to become a photon detector of choice in these experiments.
The concern regarding SiPMs to be used in these experiments
is especially their neutron radiation hardness. When exposed
to the neutron irradiation, the amount of defects caused by
the impinging neutrons increases the dark count rate and
diminishes the photon detection efficiency in the SiPM.In
order to study the performance degradation of SiPMs due to
neutron irradiation, three different SiPM modules (two
analog SiPM arrays provided by manufacturers
$\textit{SensL}$ and $\textit{Hamamatsu Corporation}$ and
one digital array by $\textit{Philips Digital Photon
Counting GmbH}$), were irradiated at the KWS-1 instrument of
the $\textit{Heinz Maier-Leibniz (MLZ)}$ research reactor in
Garching, Germany with cold neutrons having a
5$\mathring{A}$ wavelength. The scope of this work is to
perform a quantitative comparison of the photodetection
efficiency (PDE) for these SiPM technologies before and
after irradiation with cold neutrons and assess the
feasibility of the SiPM as the technology of choice for
scintillation-based photodetectors.},
cin = {ZEA-2},
cid = {I:(DE-Juel1)ZEA-2-20090406},
pnm = {899 - ohne Topic (POF3-899) / HITEC - Helmholtz
Interdisciplinary Doctoral Training in Energy and Climate
Research (HITEC) (HITEC-20170406)},
pid = {G:(DE-HGF)POF3-899 / G:(DE-Juel1)HITEC-20170406},
typ = {PUB:(DE-HGF)3 / PUB:(DE-HGF)29 / PUB:(DE-HGF)19},
url = {https://juser.fz-juelich.de/record/840073},
}