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@PHDTHESIS{Aslam:841226,
      author       = {Aslam, Nabeel},
      title        = {{R}esistive switching memory devices fromatomic layer
                      deposited binary and ternaryoxide thin films},
      volume       = {52},
      school       = {RWTH Aachen},
      type         = {Dissertation},
      address      = {Jülich},
      publisher    = {Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag},
      reportid     = {FZJ-2017-08318},
      isbn         = {978-3-95806-274-0},
      series       = {Schriften des Forschungszentrums Jülich. Reihe Information
                      / Information},
      pages        = {X, 172 S.},
      year         = {2017},
      note         = {RWTH Aachen, Diss., 2017},
      abstract     = {Redox-based resistive switching memory (ReRAM) is
                      rigorously investigated for next generation non-volatile
                      storage devices, which comprise the new storage class
                      memory(SCM) and realizations of logic in memory functions
                      that aim towards the internet of things (IoT) and to
                      neuromorphic computing. These applications require an
                      aggressive downscaling of the energy consumption of the new
                      memory devices as compared to actually used volatile dynamic
                      random access memory (DRAM) or non-volatile Flash memory.
                      ReRAM perfectly fits here due to its high energy efficiency,
                      that means, low voltage operation, good endurance and stable
                      retention at high integration density. The ReRAM function is
                      based on the capability of certain metal/metal oxide/metal
                      cells to change the resistance when electric stimuli are
                      applied. For cell dimensions of a few 10 nm in each
                      direction, the local uniformity of the resistive switching
                      (RS) layer and its compositional homogeneity become an
                      issue. So far, a lot of ReRAM research has been performed on
                      rather thick (>25 nm) oxides grown by physical vapor
                      deposition. For industrial application, atomic layer
                      deposition (ALD) will be given priority because of its
                      potential to grow ultrathin metal oxide films of high
                      density and homogeneity with a conformal coverage. Most ALD
                      oxide films are as grown in the amorphous state and
                      crystallization heat treatment is performed prior to
                      integration. However, for ultrathin (~10 nm) films there is
                      rather limited information on compositional homogeneity
                      after annealing. This effect is of particular importance for
                      ternary thin films where the local cation (off-)
                      stoichiometry might affect the microstructure and also the
                      switching performance of the entire device. Highest
                      integration density of ReRAM is achieved if the individual
                      memristors are integrated into a passive crossbar array.
                      However, sneak path currents through unselected cells
                      neighbouring the switching cell put a severe restriction on
                      the maximal achievable amount of cells in this array.
                      Therefore, biploar-type selectors have to be added to each
                      memristor. Selectors can be obtained from volatile threshold
                      switches, like, for example, NbO$_{2}$, while the adjustment
                      of the required phase is an issue. Inspired by the dynamics
                      of the constantly growing ReRAM research this work deals
                      with two oxidic materials where stoichiometries and phase
                      formations play a crucial role. Both systems, namely
                      strontium titanate (Sr$_{x}$Ti$_{y}$O$_{z}$ (short: STO))
                      and niobium oxide (Nb$_{2}$O$_{5}$/NbO$_{2}$), have been so
                      far seldomly utilized in ReRAM devices when grown by [...]},
      cin          = {PGI-7 / JARA-FIT},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {899 - ohne Topic (POF3-899)},
      pid          = {G:(DE-HGF)POF3-899},
      typ          = {PUB:(DE-HGF)3 / PUB:(DE-HGF)11},
      url          = {https://juser.fz-juelich.de/record/841226},
}