TY  - JOUR
AU  - Akola, Jaakko
AU  - Jones, R. O.
TI  - Speeding up crystallization
JO  - Science
VL  - 358
IS  - 6369
SN  - 1095-9203
CY  - Washington, DC [u.a.]
PB  - American Association for the Advancement of Science64196
M1  - FZJ-2017-08479
SP  - 1386 - 1386
PY  - 2017
AB  - Phase-change materials (PCMs) form the basis of many modern optical-storage media (such as DVDs) and promise to yield faster, more stable random-access memory (RAM) devices for computers. All of these devices are based on the fast and reversible crystallization of amorphous bits in thin polycrystalline alloy layers, with crystallization being the time-limiting stage. Optimization of the alloy composition for faster crystallization is a major challenge in speeding up this process. On page 1423 of this issue, Rao et al. (1) take full advantage of atomic-level knowledge of the structure and crystallization properties of PCMs from simulations to develop a new alloy with greatly reduced nucleation times and demonstrate subnanosecond crystallization in a PCM device based on this alloy.
LB  - PUB:(DE-HGF)16
C6  - pmid:29242333
UR  - <Go to ISI:>//WOS:000417918500021
DO  - DOI:10.1126/science.aaq0476
UR  - https://juser.fz-juelich.de/record/841404
ER  -