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@ARTICLE{Akola:841404,
author = {Akola, Jaakko and Jones, R. O.},
title = {{S}peeding up crystallization},
journal = {Science},
volume = {358},
number = {6369},
issn = {1095-9203},
address = {Washington, DC [u.a.]},
publisher = {American Association for the Advancement of Science64196},
reportid = {FZJ-2017-08479},
pages = {1386 - 1386},
year = {2017},
abstract = {Phase-change materials (PCMs) form the basis of many modern
optical-storage media (such as DVDs) and promise to yield
faster, more stable random-access memory (RAM) devices for
computers. All of these devices are based on the fast and
reversible crystallization of amorphous bits in thin
polycrystalline alloy layers, with crystallization being the
time-limiting stage. Optimization of the alloy composition
for faster crystallization is a major challenge in speeding
up this process. On page 1423 of this issue, Rao et al. (1)
take full advantage of atomic-level knowledge of the
structure and crystallization properties of PCMs from
simulations to develop a new alloy with greatly reduced
nucleation times and demonstrate subnanosecond
crystallization in a PCM device based on this alloy.},
cin = {IAS-1 / PGI-1 / JARA-FIT / JARA-HPC},
ddc = {500},
cid = {I:(DE-Juel1)IAS-1-20090406 / I:(DE-Juel1)PGI-1-20110106 /
$I:(DE-82)080009_20140620$ / $I:(DE-82)080012_20140620$},
pnm = {142 - Controlling Spin-Based Phenomena (POF3-142) / 143 -
Controlling Configuration-Based Phenomena (POF3-143) /
Density functional calculations with molecular dynamics --
amorphous and crystalline materials $(jiff05_20170501)$},
pid = {G:(DE-HGF)POF3-142 / G:(DE-HGF)POF3-143 /
$G:(DE-Juel1)jiff05_20170501$},
typ = {PUB:(DE-HGF)16},
pubmed = {pmid:29242333},
UT = {WOS:000417918500021},
doi = {10.1126/science.aaq0476},
url = {https://juser.fz-juelich.de/record/841404},
}