% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Gsken:841490,
      author       = {Güsken, Nicholas A. and Rieger, Torsten and Zellekens,
                      Patrick and Bennemann, Benjamin and Neumann, Elmar and
                      Lepsa, Mihail I. and Schäpers, Thomas and Grützmacher,
                      Detlev},
      title        = {{MBE} growth of {A}l/{I}n{A}s and {N}b/{I}n{A}s
                      superconducting hybrid nanowire structures},
      journal      = {Nanoscale},
      volume       = {9},
      number       = {43},
      issn         = {2040-3372},
      address      = {Cambridge},
      publisher    = {RSC Publ.},
      reportid     = {FZJ-2017-08534},
      pages        = {16735 - 16741},
      year         = {2017},
      abstract     = {We report the in situ growth of crystalline aluminum (Al)
                      and niobium (Nb) shells on indium arsenide (InAs) nanowires.
                      The nanowires are grown on Si(111) substrates by molecular
                      beam epitaxy (MBE) without foreign catalysts in the
                      vapor–solid (VS) mode. The metal shells are deposited by
                      electron-beam evaporation in a metal MBE. High quality
                      superconductor/semiconductor (SC/SM) hybrid structures such
                      as Al/InAs and Nb/InAs are of interest for ongoing research
                      in the fields of gateable Josephson junctions and quantum
                      information related research. Systematic investigations of
                      the deposition parameters suitable for metal shell growth
                      are conducted. In the case of Al, the substrate temperature,
                      the growth rate and the shell thickness are considered. The
                      substrate temperature as well as the angle of the impinging
                      deposition flux are explored for Nb shells. The core–shell
                      hybrid structures are characterized by electron microscopy
                      and X-ray spectroscopy. Our results show that the substrate
                      temperature is a crucial parameter in enabling the
                      deposition of smooth Al layers. Contrarily, Nb films are
                      less dependent on substrate temperature but are strongly
                      affected by the deposition angle. At a temperature of 200
                      °C Nb reacts with InAs, dissolving the nanowire crystal.
                      Our investigations result in smooth metal shells exhibiting
                      an impurity and defect free, crystalline SC/InAs interface.
                      Additionally, we find that the SC crystal structure is not
                      affected by stacking faults present in the InAs nanowires.},
      cin          = {PGI-9 / JARA-FIT / PGI-8},
      ddc          = {600},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$ /
                      I:(DE-Juel1)PGI-8-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:29068026},
      UT           = {WOS:000414960900025},
      doi          = {10.1039/C7NR03982D},
      url          = {https://juser.fz-juelich.de/record/841490},
}