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@ARTICLE{Alagha:841495,
      author       = {Alagha, S. and Heedt, S. and Vakulov, Daniil and
                      Mohammadbeigi, F. and Kumar, E Senthil and Schäpers, Thomas
                      and Isheim, D. and Watkins, S. P. and Kavanagh, K. L.},
      title        = {{E}lectrical properties of lightly {G}a-doped {Z}n{O}
                      nanowires},
      journal      = {Semiconductor science and technology},
      volume       = {32},
      number       = {12},
      issn         = {1361-6641},
      address      = {Bristol},
      publisher    = {IOP Publ.},
      reportid     = {FZJ-2017-08539},
      pages        = {125010 -},
      year         = {2017},
      abstract     = {We investigated the growth, crystal structure, elemental
                      composition and electrical transport characteristics of ZnO
                      nanowires, a promising candidate for optoelectronic
                      applications in the UV-range. Nominally-undoped and Ga-doped
                      ZnO nanowires were grown by metal-organic chemical vapor
                      deposition. Photoluminescence measurements confirmed the
                      incorporation of Ga via donor-bound exciton emission. With
                      atom-probe tomography we estimated an upper limit of the Ga
                      impurity concentration (${10}^{18}\,{\mathrm{cm}}^{-3}$). We
                      studied the electrical transport characteristics of these
                      nanowires with a W-nanoprobe technique inside a scanning
                      electron microscope and with lithographically-defined
                      contacts allowing back-gated measurements. An increase in
                      apparent resistivity by two orders of magnitude with
                      decreasing radius was measured with both techniques with a
                      much larger distribution width for the nanoprobe method. A
                      drop in the effective carrier concentration and mobility was
                      found with decreasing radius which can be attributed to
                      carrier depletion and enhanced scattering due to surface
                      states. Little evidence of a change in resistivity was
                      observed with Ga doping, which indicates that the
                      concentration of native or background dopants is higher than
                      the Ga doping concentration.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000414194400003},
      doi          = {10.1088/1361-6641/aa91ef},
      url          = {https://juser.fz-juelich.de/record/841495},
}