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| 001 | 841495 | ||
| 005 | 20210129232024.0 | ||
| 024 | 7 | _ | |a 10.1088/1361-6641/aa91ef |2 doi |
| 024 | 7 | _ | |a 0268-1242 |2 ISSN |
| 024 | 7 | _ | |a 1361-6641 |2 ISSN |
| 024 | 7 | _ | |a WOS:000414194400003 |2 WOS |
| 024 | 7 | _ | |a altmetric:32011784 |2 altmetric |
| 037 | _ | _ | |a FZJ-2017-08539 |
| 041 | _ | _ | |a English |
| 082 | _ | _ | |a 530 |
| 100 | 1 | _ | |a Alagha, S. |0 P:(DE-HGF)0 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Electrical properties of lightly Ga-doped ZnO nanowires |
| 260 | _ | _ | |a Bristol |c 2017 |b IOP Publ. |
| 336 | 7 | _ | |a article |2 DRIVER |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1516103784_14951 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 520 | _ | _ | |a We investigated the growth, crystal structure, elemental composition and electrical transport characteristics of ZnO nanowires, a promising candidate for optoelectronic applications in the UV-range. Nominally-undoped and Ga-doped ZnO nanowires were grown by metal-organic chemical vapor deposition. Photoluminescence measurements confirmed the incorporation of Ga via donor-bound exciton emission. With atom-probe tomography we estimated an upper limit of the Ga impurity concentration (${10}^{18}\,{\mathrm{cm}}^{-3}$). We studied the electrical transport characteristics of these nanowires with a W-nanoprobe technique inside a scanning electron microscope and with lithographically-defined contacts allowing back-gated measurements. An increase in apparent resistivity by two orders of magnitude with decreasing radius was measured with both techniques with a much larger distribution width for the nanoprobe method. A drop in the effective carrier concentration and mobility was found with decreasing radius which can be attributed to carrier depletion and enhanced scattering due to surface states. Little evidence of a change in resistivity was observed with Ga doping, which indicates that the concentration of native or background dopants is higher than the Ga doping concentration. |
| 536 | _ | _ | |a 521 - Controlling Electron Charge-Based Phenomena (POF3-521) |0 G:(DE-HGF)POF3-521 |c POF3-521 |f POF III |x 0 |
| 588 | _ | _ | |a Dataset connected to CrossRef |
| 650 | 2 | 7 | |a Condensed Matter Physics |0 V:(DE-MLZ)SciArea-120 |2 V:(DE-HGF) |x 0 |
| 650 | 1 | 7 | |a Information and Communication |0 V:(DE-MLZ)GC-120-2016 |2 V:(DE-HGF) |x 0 |
| 700 | 1 | _ | |a Heedt, S. |0 P:(DE-Juel1)140272 |b 1 |
| 700 | 1 | _ | |a Vakulov, Daniil |0 P:(DE-Juel1)165897 |b 2 |
| 700 | 1 | _ | |a Mohammadbeigi, F. |0 P:(DE-HGF)0 |b 3 |
| 700 | 1 | _ | |a Kumar, E Senthil |0 P:(DE-HGF)0 |b 4 |
| 700 | 1 | _ | |a Schäpers, Thomas |0 P:(DE-Juel1)128634 |b 5 |
| 700 | 1 | _ | |a Isheim, D. |0 P:(DE-HGF)0 |b 6 |
| 700 | 1 | _ | |a Watkins, S. P. |0 P:(DE-HGF)0 |b 7 |
| 700 | 1 | _ | |a Kavanagh, K. L. |0 P:(DE-HGF)0 |b 8 |
| 773 | _ | _ | |a 10.1088/1361-6641/aa91ef |g Vol. 32, no. 12, p. 125010 - |0 PERI:(DE-600)1361285-2 |n 12 |p 125010 - |t Semiconductor science and technology |v 32 |y 2017 |x 1361-6641 |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/841495/files/Alagha_2017_Semicond._Sci._Technol._32_125010.pdf |y Restricted |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/841495/files/Alagha_2017_Semicond._Sci._Technol._32_125010.gif?subformat=icon |x icon |y Restricted |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/841495/files/Alagha_2017_Semicond._Sci._Technol._32_125010.jpg?subformat=icon-1440 |x icon-1440 |y Restricted |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/841495/files/Alagha_2017_Semicond._Sci._Technol._32_125010.jpg?subformat=icon-180 |x icon-180 |y Restricted |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/841495/files/Alagha_2017_Semicond._Sci._Technol._32_125010.jpg?subformat=icon-640 |x icon-640 |y Restricted |
| 856 | 4 | _ | |u https://juser.fz-juelich.de/record/841495/files/Alagha_2017_Semicond._Sci._Technol._32_125010.pdf?subformat=pdfa |x pdfa |y Restricted |
| 909 | C | O | |o oai:juser.fz-juelich.de:841495 |p VDB |
| 910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 1 |6 P:(DE-Juel1)140272 |
| 910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 2 |6 P:(DE-Juel1)165897 |
| 910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 5 |6 P:(DE-Juel1)128634 |
| 913 | 1 | _ | |a DE-HGF |b Key Technologies |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |1 G:(DE-HGF)POF3-520 |0 G:(DE-HGF)POF3-521 |2 G:(DE-HGF)POF3-500 |v Controlling Electron Charge-Based Phenomena |x 0 |4 G:(DE-HGF)POF |3 G:(DE-HGF)POF3 |
| 914 | 1 | _ | |y 2017 |
| 915 | _ | _ | |a Nationallizenz |0 StatID:(DE-HGF)0420 |2 StatID |
| 915 | _ | _ | |a National-Konsortium |0 StatID:(DE-HGF)0430 |2 StatID |
| 915 | _ | _ | |a JCR |0 StatID:(DE-HGF)0100 |2 StatID |b SEMICOND SCI TECH : 2015 |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0200 |2 StatID |b SCOPUS |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0300 |2 StatID |b Medline |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0600 |2 StatID |b Ebsco Academic Search |
| 915 | _ | _ | |a Peer Review |0 StatID:(DE-HGF)0030 |2 StatID |b ASC |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0199 |2 StatID |b Thomson Reuters Master Journal List |
| 915 | _ | _ | |a WoS |0 StatID:(DE-HGF)0110 |2 StatID |b Science Citation Index |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0150 |2 StatID |b Web of Science Core Collection |
| 915 | _ | _ | |a WoS |0 StatID:(DE-HGF)0111 |2 StatID |b Science Citation Index Expanded |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)1150 |2 StatID |b Current Contents - Physical, Chemical and Earth Sciences |
| 915 | _ | _ | |a IF < 5 |0 StatID:(DE-HGF)9900 |2 StatID |
| 920 | _ | _ | |l yes |
| 920 | 1 | _ | |0 I:(DE-Juel1)PGI-9-20110106 |k PGI-9 |l Halbleiter-Nanoelektronik |x 0 |
| 920 | 1 | _ | |0 I:(DE-82)080009_20140620 |k JARA-FIT |l JARA-FIT |x 1 |
| 980 | _ | _ | |a journal |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
| 980 | _ | _ | |a I:(DE-82)080009_20140620 |
| 980 | _ | _ | |a UNRESTRICTED |
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