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@ARTICLE{Rieger:841497,
      author       = {Rieger, Torsten and Zellekens, Patrick and Demarina,
                      Nataliya and Hassan, Ali Al and Hackemüller, Franz Josef
                      and Lüth, Hans and Pietsch, Ullrich and Schäpers, Thomas
                      and Grützmacher, Detlev and Lepsa, Mihail Ion},
      title        = {{S}train relaxation and ambipolar electrical transport in
                      {G}a{A}s/{I}n{S}b core–shell nanowires},
      journal      = {Nanoscale},
      volume       = {9},
      number       = {46},
      issn         = {2040-3372},
      address      = {Cambridge},
      publisher    = {RSC Publ.},
      reportid     = {FZJ-2017-08541},
      pages        = {18392 - 18401},
      year         = {2017},
      abstract     = {The growth, crystal structure, strain relaxation and room
                      temperature transport characteristics of GaAs/InSb
                      core–shell nanowires grown using molecular beam epitaxy
                      are investigated. Due to the large lattice mismatch between
                      GaAs and InSb of $14\%,$ a transition from island-based to
                      layer-like growth occurs during the formation of the shell.
                      High resolution transmission electron microscopy in
                      combination with geometric phase analyses as well as X-ray
                      diffraction with synchrotron radiation are used to
                      investigate the strain relaxation and prove the existence of
                      different dislocations relaxing the strain on zinc blende
                      and wurtzite core–shell nanowire segments. While on the
                      wurtzite phase only Frank partial dislocations are found,
                      the strain on the zinc blende phase is relaxed by
                      dislocations with perfect, Shockley partial and Frank
                      partial dislocations. Even for ultrathin shells of about 2
                      nm thickness, the strain caused by the high lattice mismatch
                      between GaAs and InSb is relaxed almost completely. Transfer
                      characteristics of the core–shell nanowires show an
                      ambipolar conductance behavior whose strength strongly
                      depends on the dimensions of the nanowires. The
                      interpretation is given based on an electronic band profile
                      which is calculated for completely relaxed core/shell
                      structures. The peculiarities of the band alignment in this
                      situation implies simultaneously occupied electron and hole
                      channels in the InSb shell. The ambipolar behavior is then
                      explained by the change of carrier concentration in both
                      channels by the gate voltage.},
      cin          = {PGI-9 / JARA-FIT / IBN-2 / PGI-10},
      ddc          = {600},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$ /
                      I:(DE-Juel1)IBN-2-20090406 / I:(DE-Juel1)PGI-10-20170113},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000416824100031},
      doi          = {10.1039/C7NR05201D},
      url          = {https://juser.fz-juelich.de/record/841497},
}