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000841505 1001_ $$0P:(DE-Juel1)165984$$aSchüffelgen, Peter$$b0$$eCorresponding author
000841505 245__ $$aStencil lithography of superconducting contacts on MBE-grown topological insulator thin films
000841505 260__ $$aAmsterdam [u.a.]$$bElsevier$$c2017
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000841505 520__ $$aTopological insulator (Bi0.06Sb0.94)2Te3 thin films grown by molecular beam epitaxy have been capped in-situ with a 2 nm Al film to conserve the pristine topological surface states. Subsequently, a shadow mask - structured by means of focus ion beam - was in-situ placed underneath the sample to deposit a thick layer of Al on well-defined microscopically small areas. The 2 nm thin Al layer fully oxidizes after exposure to air and in this way protects the TI surface from degradation. The thick Al layer remains metallic underneath a 3–4 nm thick native oxide layer and therefore serves as (super-) conducting contacts. Superconductor-Topological Insulator-Superconductor junctions with lateral dimensions in the nm range have then been fabricated via an alternative stencil lithography technique. Despite the in-situ deposition, transport measurements and transmission electron microscope analysis indicate a low transparency, due to an intermixed region at the interface between topological insulator thin film and metallic Al.
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000841505 7001_ $$0P:(DE-Juel1)167347$$aRosenbach, Daniel$$b1
000841505 7001_ $$0P:(DE-Juel1)156529$$aNeumann, Elmar$$b2
000841505 7001_ $$0P:(DE-HGF)0$$aStehno, Martin P.$$b3
000841505 7001_ $$0P:(DE-HGF)0$$aLanius, Martin$$b4
000841505 7001_ $$0P:(DE-HGF)0$$aZhao, Jialin$$b5
000841505 7001_ $$0P:(DE-HGF)0$$aWang, Meng$$b6
000841505 7001_ $$0P:(DE-HGF)0$$aSheehan, Brendan$$b7
000841505 7001_ $$0P:(DE-HGF)0$$aSchmidt, Michael$$b8
000841505 7001_ $$0P:(DE-HGF)0$$aGao, Bo$$b9
000841505 7001_ $$0P:(DE-HGF)0$$aBrinkman, Alexander$$b10
000841505 7001_ $$0P:(DE-Juel1)128617$$aMussler, Gregor$$b11
000841505 7001_ $$0P:(DE-Juel1)128634$$aSchäpers, Thomas$$b12
000841505 7001_ $$0P:(DE-Juel1)125588$$aGrützmacher, Detlev$$b13
000841505 773__ $$0PERI:(DE-600)1466514-1$$a10.1016/j.jcrysgro.2017.03.035$$gVol. 477, p. 183 - 187$$p183 - 187$$tJournal of crystal growth$$v477$$x0022-0248$$y2017
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