TY  - JOUR
AU  - Schüffelgen, Peter
AU  - Rosenbach, Daniel
AU  - Neumann, Elmar
AU  - Stehno, Martin P.
AU  - Lanius, Martin
AU  - Zhao, Jialin
AU  - Wang, Meng
AU  - Sheehan, Brendan
AU  - Schmidt, Michael
AU  - Gao, Bo
AU  - Brinkman, Alexander
AU  - Mussler, Gregor
AU  - Schäpers, Thomas
AU  - Grützmacher, Detlev
TI  - Stencil lithography of superconducting contacts on MBE-grown topological insulator thin films
JO  - Journal of crystal growth
VL  - 477
SN  - 0022-0248
CY  - Amsterdam [u.a.]
PB  - Elsevier
M1  - FZJ-2017-08549
SP  - 183 - 187
PY  - 2017
AB  - Topological insulator (Bi0.06Sb0.94)2Te3 thin films grown by molecular beam epitaxy have been capped in-situ with a 2 nm Al film to conserve the pristine topological surface states. Subsequently, a shadow mask - structured by means of focus ion beam - was in-situ placed underneath the sample to deposit a thick layer of Al on well-defined microscopically small areas. The 2 nm thin Al layer fully oxidizes after exposure to air and in this way protects the TI surface from degradation. The thick Al layer remains metallic underneath a 3–4 nm thick native oxide layer and therefore serves as (super-) conducting contacts. Superconductor-Topological Insulator-Superconductor junctions with lateral dimensions in the nm range have then been fabricated via an alternative stencil lithography technique. Despite the in-situ deposition, transport measurements and transmission electron microscope analysis indicate a low transparency, due to an intermixed region at the interface between topological insulator thin film and metallic Al.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000413646100039
DO  - DOI:10.1016/j.jcrysgro.2017.03.035
UR  - https://juser.fz-juelich.de/record/841505
ER  -