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@ARTICLE{Schffelgen:841505,
      author       = {Schüffelgen, Peter and Rosenbach, Daniel and Neumann,
                      Elmar and Stehno, Martin P. and Lanius, Martin and Zhao,
                      Jialin and Wang, Meng and Sheehan, Brendan and Schmidt,
                      Michael and Gao, Bo and Brinkman, Alexander and Mussler,
                      Gregor and Schäpers, Thomas and Grützmacher, Detlev},
      title        = {{S}tencil lithography of superconducting contacts on
                      {MBE}-grown topological insulator thin films},
      journal      = {Journal of crystal growth},
      volume       = {477},
      issn         = {0022-0248},
      address      = {Amsterdam [u.a.]},
      publisher    = {Elsevier},
      reportid     = {FZJ-2017-08549},
      pages        = {183 - 187},
      year         = {2017},
      abstract     = {Topological insulator (Bi0.06Sb0.94)2Te3 thin films grown
                      by molecular beam epitaxy have been capped in-situ with a 2
                      nm Al film to conserve the pristine topological surface
                      states. Subsequently, a shadow mask - structured by means of
                      focus ion beam - was in-situ placed underneath the sample to
                      deposit a thick layer of Al on well-defined microscopically
                      small areas. The 2 nm thin Al layer fully oxidizes after
                      exposure to air and in this way protects the TI surface from
                      degradation. The thick Al layer remains metallic underneath
                      a 3–4 nm thick native oxide layer and therefore serves as
                      (super-) conducting contacts. Superconductor-Topological
                      Insulator-Superconductor junctions with lateral dimensions
                      in the nm range have then been fabricated via an alternative
                      stencil lithography technique. Despite the in-situ
                      deposition, transport measurements and transmission electron
                      microscope analysis indicate a low transparency, due to an
                      intermixed region at the interface between topological
                      insulator thin film and metallic Al.},
      cin          = {PGI-9 / HNF},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)HNF-20170116},
      pnm          = {522 - Controlling Spin-Based Phenomena (POF3-522)},
      pid          = {G:(DE-HGF)POF3-522},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000413646100039},
      doi          = {10.1016/j.jcrysgro.2017.03.035},
      url          = {https://juser.fz-juelich.de/record/841505},
}