000841561 001__ 841561
000841561 005__ 20210129232034.0
000841561 0247_ $$2Handle$$a2128/17586
000841561 0247_ $$2ISSN$$a1866-1777
000841561 020__ $$a978-3-95806-270-2
000841561 037__ $$aFZJ-2017-08599
000841561 1001_ $$0P:(DE-Juel1)157669$$aBreuer, Thomas$$b0$$eCorresponding author$$gmale$$ufzj
000841561 245__ $$aDevelopment of ReRAM-based Devices for Logic- and Computation-in-Memory Applications$$f- 2018-03-07
000841561 260__ $$aJülich$$bForschungszentrum Jülich GmbH Zentralbibliothek, Verlag$$c2017
000841561 300__ $$ax, 180 S.
000841561 3367_ $$2DataCite$$aOutput Types/Dissertation
000841561 3367_ $$0PUB:(DE-HGF)3$$2PUB:(DE-HGF)$$aBook$$mbook
000841561 3367_ $$2ORCID$$aDISSERTATION
000841561 3367_ $$2BibTeX$$aPHDTHESIS
000841561 3367_ $$02$$2EndNote$$aThesis
000841561 3367_ $$0PUB:(DE-HGF)11$$2PUB:(DE-HGF)$$aDissertation / PhD Thesis$$bphd$$mphd$$s1520410470_5953
000841561 3367_ $$2DRIVER$$adoctoralThesis
000841561 4900_ $$aSchriften des Forschungszentrums Jülich. Reihe Information / Information$$v51
000841561 502__ $$aRWTH Aachen, Diss., 2017$$bDissertation$$cRWTH Aachen$$d2017
000841561 520__ $$aRapid growth of future information technology depends on energy-efficient computation and ultra-high density data storage. Non-volatile redox-based resistive switching memory (ReRAM) devices offer logic-in-memory and cognitive computing capabilities and can redefine von Neuman computer architecture. The Complementary Resistive Switch (CRS), where two bipolar switching cells are vertically stacked, is a promising candidate and enables integration of highly dense passive nano-crossbar arrays in 4F$^{2}$ structure (with minimum feature size $\textit{F}$). Due to the intrinsic non-linearity, the need for selector devices in the array is no longer required. Firstly, Ta$_{2}$O$_{5}$-based two-terminal devices (no access to the middle electrode (ME)) are considered, which facilitate simple integration and low fabrication cost. Their electrical characteristics are compared with switching of three-terminal devices (exhibiting access to the ME), in order to investigate the impact of single cell properties on the whole CRS. Initial electroforming process in the three-terminal devices is carried out by applying voltage stimuli to individual ReRAM cells. However, two-terminal devices require introduction of a novel procedure, which enables separate and controlled electroforming for low-current operations (< 300 μA). Such devices (with improved endurance about 10$^{6}$ cycles) have been used to implement fuzzy logic in terms of MIN / MAX gates (concept suggested by Klimo et al. in [7], Nielen et al. in [8]), which could enable small-size sorting networks. To reduce fabrication complexity, vertically stacked Pt|HfO$_{2}$|Hf|Pt ReRAM stacks are investigated, which offer similar I-V characteristics to the CRS, referredto as Complementary Switch (CS). The intrinsic complementary switching can be modified externally to eight-wise and counter-eight-wise bipolar switching. However, the Hf electrode thickness has also impact on the actual switching mode. Further process parameters, such as deposition rate of HfO$_{2}$, have much more of an impact on the initial device. Next, integration of the CS into 1×8 passive crossbar arrays is demonstrated. First, the implementation of all Boolean CRS-logic operations (concept suggested by Linn et al. in [9]) with the CS is proven, showing remarkable endurance (10$^{9}$ cycles). Afterward, two in-memory adders (concepts introduced by Siemon et al. in [10]) are experimentally demonstrated, which perform addition and subtraction operations. Altogether, this could pave the way for next-generation information technology for parallel processing-in-memory architecture, which is implemented by ReRAMs embedded in energy-efficient, ultra-dense 4F$^{2}$ passive crossbar arrays.
000841561 536__ $$0G:(DE-HGF)POF3-899$$a899 - ohne Topic (POF3-899)$$cPOF3-899$$fPOF III$$x0
000841561 8564_ $$uhttps://juser.fz-juelich.de/record/841561/files/Information_51.pdf$$yOpenAccess
000841561 8564_ $$uhttps://juser.fz-juelich.de/record/841561/files/Information_51.gif?subformat=icon$$xicon$$yOpenAccess
000841561 8564_ $$uhttps://juser.fz-juelich.de/record/841561/files/Information_51.jpg?subformat=icon-1440$$xicon-1440$$yOpenAccess
000841561 8564_ $$uhttps://juser.fz-juelich.de/record/841561/files/Information_51.jpg?subformat=icon-180$$xicon-180$$yOpenAccess
000841561 8564_ $$uhttps://juser.fz-juelich.de/record/841561/files/Information_51.jpg?subformat=icon-640$$xicon-640$$yOpenAccess
000841561 8564_ $$uhttps://juser.fz-juelich.de/record/841561/files/Information_51.pdf?subformat=pdfa$$xpdfa$$yOpenAccess
000841561 909CO $$ooai:juser.fz-juelich.de:841561$$pdnbdelivery$$pdriver$$pVDB$$popen_access$$popenaire
000841561 915__ $$0StatID:(DE-HGF)0510$$2StatID$$aOpenAccess
000841561 915__ $$0LIC:(DE-HGF)CCBY4$$2HGFVOC$$aCreative Commons Attribution CC BY 4.0
000841561 9141_ $$y2018
000841561 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)157669$$aForschungszentrum Jülich$$b0$$kFZJ
000841561 9131_ $$0G:(DE-HGF)POF3-899$$1G:(DE-HGF)POF3-890$$2G:(DE-HGF)POF3-800$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bProgrammungebundene Forschung$$lohne Programm$$vohne Topic$$x0
000841561 920__ $$lyes
000841561 9201_ $$0I:(DE-Juel1)PGI-7-20110106$$kPGI-7$$lElektronische Materialien$$x0
000841561 980__ $$aphd
000841561 980__ $$aVDB
000841561 980__ $$aUNRESTRICTED
000841561 980__ $$abook
000841561 980__ $$aI:(DE-Juel1)PGI-7-20110106
000841561 9801_ $$aFullTexts