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@PHDTHESIS{Breuer:841561,
      author       = {Breuer, Thomas},
      title        = {{D}evelopment of {R}e{RAM}-based {D}evices for {L}ogic- and
                      {C}omputation-in-{M}emory {A}pplications},
      volume       = {51},
      school       = {RWTH Aachen},
      type         = {Dissertation},
      address      = {Jülich},
      publisher    = {Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag},
      reportid     = {FZJ-2017-08599},
      isbn         = {978-3-95806-270-2},
      series       = {Schriften des Forschungszentrums Jülich. Reihe Information
                      / Information},
      pages        = {x, 180 S.},
      year         = {2017},
      note         = {RWTH Aachen, Diss., 2017},
      abstract     = {Rapid growth of future information technology depends on
                      energy-efficient computation and ultra-high density data
                      storage. Non-volatile redox-based resistive switching memory
                      (ReRAM) devices offer logic-in-memory and cognitive
                      computing capabilities and can redefine von Neuman computer
                      architecture. The Complementary Resistive Switch (CRS),
                      where two bipolar switching cells are vertically stacked, is
                      a promising candidate and enables integration of highly
                      dense passive nano-crossbar arrays in 4F$^{2}$ structure
                      (with minimum feature size $\textit{F}$). Due to the
                      intrinsic non-linearity, the need for selector devices in
                      the array is no longer required. Firstly,
                      Ta$_{2}$O$_{5}$-based two-terminal devices (no access to the
                      middle electrode (ME)) are considered, which facilitate
                      simple integration and low fabrication cost. Their
                      electrical characteristics are compared with switching of
                      three-terminal devices (exhibiting access to the ME), in
                      order to investigate the impact of single cell properties on
                      the whole CRS. Initial electroforming process in the
                      three-terminal devices is carried out by applying voltage
                      stimuli to individual ReRAM cells. However, two-terminal
                      devices require introduction of a novel procedure, which
                      enables separate and controlled electroforming for
                      low-current operations (< 300 μA). Such devices (with
                      improved endurance about 10$^{6}$ cycles) have been used to
                      implement fuzzy logic in terms of MIN / MAX gates (concept
                      suggested by Klimo et al. in [7], Nielen et al. in [8]),
                      which could enable small-size sorting networks. To reduce
                      fabrication complexity, vertically stacked
                      Pt|HfO$_{2}$|Hf|Pt ReRAM stacks are investigated, which
                      offer similar I-V characteristics to the CRS, referredto as
                      Complementary Switch (CS). The intrinsic complementary
                      switching can be modified externally to eight-wise and
                      counter-eight-wise bipolar switching. However, the Hf
                      electrode thickness has also impact on the actual switching
                      mode. Further process parameters, such as deposition rate of
                      HfO$_{2}$, have much more of an impact on the initial
                      device. Next, integration of the CS into 1×8 passive
                      crossbar arrays is demonstrated. First, the implementation
                      of all Boolean CRS-logic operations (concept suggested by
                      Linn et al. in [9]) with the CS is proven, showing
                      remarkable endurance (10$^{9}$ cycles). Afterward, two
                      in-memory adders (concepts introduced by Siemon et al. in
                      [10]) are experimentally demonstrated, which perform
                      addition and subtraction operations. Altogether, this could
                      pave the way for next-generation information technology for
                      parallel processing-in-memory architecture, which is
                      implemented by ReRAMs embedded in energy-efficient,
                      ultra-dense 4F$^{2}$ passive crossbar arrays.},
      cin          = {PGI-7},
      cid          = {I:(DE-Juel1)PGI-7-20110106},
      pnm          = {899 - ohne Topic (POF3-899)},
      pid          = {G:(DE-HGF)POF3-899},
      typ          = {PUB:(DE-HGF)3 / PUB:(DE-HGF)11},
      url          = {https://juser.fz-juelich.de/record/841561},
}