%0 Journal Article
%A Valerius, Philipp
%A Herbig, Charlotte
%A Will, Moritz
%A Arman, Mohammad A.
%A Knudsen, Jan
%A Caciuc, Vasile
%A Atodiresei, Nicolae
%A Michely, Thomas
%T Annealing of ion-irradiated hexagonal boron nitride on Ir(111)
%J Physical review / B
%V 96
%N 23
%@ 2469-9950
%C Woodbury, NY
%I Inst.
%M FZJ-2017-08656
%P 235410
%D 2017
%X Annealing of a monolayer of hexagonal boron nitride destroyed by Xe ion irradiation gives rise to rich structural phenomena investigated here through a combination of scanning tunneling microscopy, low-energy electron diffraction, x-ray photoelectron spectroscopy, and density functional theory calculations. We find selective pinning of vacancy clusters at a single specific location within the moiré formed by hexagonal boron nitride (h-BN) and the Ir substrate, crystalline Xe at room temperature of monolayer and bilayer thickness sealed inside h-BN blisters, standalone blisters only bound to the metal at temperatures where boron nitride on Ir(111) decomposes, and finally a pronounced threefold symmetry of all morphological features due to the preferential formation of boron-terminated zigzag edges that firmly bind to the substrate. The investigations give clear insight into the relevance of the substrate for the damage creation and annealing in a two-dimensional layer material.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000417487200004
%R 10.1103/PhysRevB.96.235410
%U https://juser.fz-juelich.de/record/841621