TY  - JOUR
AU  - Valerius, Philipp
AU  - Herbig, Charlotte
AU  - Will, Moritz
AU  - Arman, Mohammad A.
AU  - Knudsen, Jan
AU  - Caciuc, Vasile
AU  - Atodiresei, Nicolae
AU  - Michely, Thomas
TI  - Annealing of ion-irradiated hexagonal boron nitride on Ir(111)
JO  - Physical review / B
VL  - 96
IS  - 23
SN  - 2469-9950
CY  - Woodbury, NY
PB  - Inst.
M1  - FZJ-2017-08656
SP  - 235410
PY  - 2017
AB  - Annealing of a monolayer of hexagonal boron nitride destroyed by Xe ion irradiation gives rise to rich structural phenomena investigated here through a combination of scanning tunneling microscopy, low-energy electron diffraction, x-ray photoelectron spectroscopy, and density functional theory calculations. We find selective pinning of vacancy clusters at a single specific location within the moiré formed by hexagonal boron nitride (h-BN) and the Ir substrate, crystalline Xe at room temperature of monolayer and bilayer thickness sealed inside h-BN blisters, standalone blisters only bound to the metal at temperatures where boron nitride on Ir(111) decomposes, and finally a pronounced threefold symmetry of all morphological features due to the preferential formation of boron-terminated zigzag edges that firmly bind to the substrate. The investigations give clear insight into the relevance of the substrate for the damage creation and annealing in a two-dimensional layer material.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000417487200004
DO  - DOI:10.1103/PhysRevB.96.235410
UR  - https://juser.fz-juelich.de/record/841621
ER  -