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@INPROCEEDINGS{Vliex:841875,
author = {Vliex, Patrick and Degenhardt, Carsten and Geck, Lotte and
Kruth, Andre and Nielinger, Dennis and van Waasen, Stefan
and Heinen, Stefan},
title = {{I}nvestigating {CMOS} {B}ased {L}ocal {B}ias {V}oltage
{G}eneration for {S}olid-{S}tate {Q}ubit {P}otential {W}ell
{C}reation},
reportid = {FZJ-2018-00172},
year = {2017},
abstract = {Operation of a general purpose Quantum Computer requires
millions of physical Qubits [1]. In order to reach this
number a truly scalable electrical control approach and a
corresponding rise in control and read-out capabilities will
be necessary. As interfacing more and more Qubits is
required, a natural approach is to integrate as much control
and read-out capability as possible close to the Qubits.
Therefore, it seems reasonable to use (semiconductor based)
integrated circuits (ICs) located in the same cryogenic
environment as the Qubits inside a dilution refrigerator.
This gives rise to highly specific requirements and
challenges calling for novel circuit approaches and
architectures as well as application specific designs [2]. A
proof of concept IC implementation is ongoing in order to
demonstrate solid-state Qubit control by an adjacent placed
CMOS Chip in the temperature regime around 100 mK using a
commercial 65 nm technology. One major challenge is the
broadly unexplored device behavior and lack of modeling of
classical bulk CMOS processes at cryogenic temperatures
below the freeze-out point of dopants (<30 K) [3].
Furthermore, today’s low cooling power budget of dilution
refrigerators at the lowest sub 1 K temperature stage of
about 1 mW poses an additional challenge to the system
solution and circuit design. First IC design approaches will
be shown utilizing a 13 bit charge-redistribution DAC
topology with 20 multiplexed output channels to deliver
extremely stable DC output voltages (1 V dynamic range;
voltage uncertainties of less than 30 µV) to form the
potential well for gate defined lateral quantum dots (e.g.
GaAs or SiGe based). First simulation results indicate the
possibility of operating multiple GaAs based Spin Qubits
(each requiring up to 10 distinct DC voltages) in parallel
within the given cooling power budget. Promising early stage
results of noise performance simulations are discussed and
the next required steps towards a fully integrated
proof-of-concept setup are introduced.[1] R. Van Meter and
C. Horsman, “A Blueprint for Building a Quantum
Computer,” in Communications of the ACM, vol. 56, no. 10,
pp. 84-93, October 2013.[2] B. Okcan, G. Gielen and C. Van
Hoof, “A third-order complementary
metal-oxide-semiconductor sigma-delta modulator operating
between 4.2 K and 300 K,” in Review of Scientific
Instruments, vol. 83, no. 2, p. 024708, 2012.[3] Y. Creten,
P. Merken, W. Sansen, R. P. Mertens and C. Van Hoof, "An
8-Bit Flash Analog-to-Digital Converter in Standard CMOS
Technology Functional From 4.2 K to 300 K," in IEEE Journal
of Solid-State Circuits, vol. 44, no. 7, pp. 2019-2025, July
2009.},
month = {Aug},
date = {2017-08-18},
organization = {International Workshop on Silicon
Quantum Electronics, Hillsboro (USA),
18 Aug 2017 - 21 Aug 2017},
subtyp = {After Call},
cin = {ZEA-2},
cid = {I:(DE-Juel1)ZEA-2-20090406},
pnm = {524 - Controlling Collective States (POF3-524) / IVF -
Impuls- und Vernetzungsfonds (IVF-20140101) / HITEC -
Helmholtz Interdisciplinary Doctoral Training in Energy and
Climate Research (HITEC) (HITEC-20170406)},
pid = {G:(DE-HGF)POF3-524 / G:(DE-HGF)IVF-20140101 /
G:(DE-Juel1)HITEC-20170406},
typ = {PUB:(DE-HGF)24},
url = {https://juser.fz-juelich.de/record/841875},
}