000842670 001__ 842670 000842670 005__ 20210129232425.0 000842670 037__ $$aFZJ-2018-00877 000842670 1001_ $$0P:(DE-Juel1)168533$$aZhang, Jing$$b0$$eCorresponding author 000842670 245__ $$aAnalysis of ferroelectric layers of doped HfO2$$f - 2017-05-17 000842670 260__ $$c2017 000842670 300__ $$ap.53 000842670 3367_ $$2DataCite$$aOutput Types/Supervised Student Publication 000842670 3367_ $$02$$2EndNote$$aThesis 000842670 3367_ $$2BibTeX$$aMASTERSTHESIS 000842670 3367_ $$2DRIVER$$amasterThesis 000842670 3367_ $$0PUB:(DE-HGF)19$$2PUB:(DE-HGF)$$aMaster Thesis$$bmaster$$mmaster$$s1517392538_28753 000842670 3367_ $$2ORCID$$aSUPERVISED_STUDENT_PUBLICATION 000842670 502__ $$aMasterarbeit, RWTH Aachen University, 2017$$bMasterarbeit$$cRWTH Aachen University$$d2017 000842670 536__ $$0G:(DE-HGF)POF3-521$$a521 - Controlling Electron Charge-Based Phenomena (POF3-521)$$cPOF3-521$$fPOF III$$x0 000842670 909CO $$ooai:juser.fz-juelich.de:842670$$pVDB 000842670 9101_ $$0I:(DE-588b)36225-6$$6P:(DE-Juel1)168533$$aRWTH Aachen$$b0$$kRWTH 000842670 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)168533$$aForschungszentrum Jülich$$b0$$kFZJ 000842670 9131_ $$0G:(DE-HGF)POF3-521$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Electron Charge-Based Phenomena$$x0 000842670 9141_ $$y2017 000842670 920__ $$lyes 000842670 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0 000842670 980__ $$amaster 000842670 980__ $$aVDB 000842670 980__ $$aI:(DE-Juel1)PGI-9-20110106 000842670 980__ $$aUNRESTRICTED