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@ARTICLE{Kumar:843903,
      author       = {Kumar, S. and Durini, D. and Degenhardt, C. and van Waasen,
                      Stefan},
      title        = {{P}hotodetection {C}haracterization of {S}i{PM}
                      {T}echnologies for their {A}pplication in {S}cintillator
                      based {N}eutron {D}etectors},
      journal      = {Journal of Instrumentation},
      volume       = {13},
      number       = {01},
      issn         = {1748-0221},
      address      = {London},
      publisher    = {Inst. of Physics},
      reportid     = {FZJ-2018-01430},
      pages        = {C01042 - C01042},
      year         = {2018},
      abstract     = {Small-angle neutron scattering (SANS) experiments have
                      become one of the most important techniques in the
                      investigation of the properties of material on the atomic
                      scale. Until 2001, nearly exclusively 3He-based detectors
                      were used for neutron detection in these experiments, but
                      due to the scarcity of 3He and its steeply rising price,
                      researchers started to look for suitable alternatives.
                      Scintillation based solid state detectors appeared as a
                      prominent alternative. Silicon photomultipliers (SiPM),
                      having single photon resolution, lower bias voltages
                      compared to photomultiplier tubes (PMT), insensitivity to
                      magnetic fields, low cost, possibility of modular design and
                      higher readout rates, have the potential of becoming a
                      photon detector of choice in scintillator based neutron
                      detectors. The major concerns for utilizing the SiPM
                      technology in this kind of applications are the increase in
                      their noise performance and the decrease in their photon
                      detection efficiency (PDE) due to direct exposure to
                      neutrons. Here, a detailed comparative analysis of the PDE
                      performance in the range between UV and NIR parts of the
                      spectra for three different SiPM technologies, before and
                      after irradiation with cold neutrons, has been carried out.
                      For this investigation, one digital and two analog SiPM
                      arrays were irradiated with 5Å wavelength cold neutrons and
                      up to a dose of 6×1012 n/cm2 at the KWS-1 instrument of the
                      Heinz Maier-Leibnitz Zentrum (MLZ) in Garching, Germany.},
      cin          = {JCNS (München) ; Jülich Centre for Neutron Science JCNS
                      (München) ; JCNS-FRM-II / Neutronenstreuung ; JCNS-1 /
                      ZEA-2},
      ddc          = {610},
      cid          = {I:(DE-Juel1)JCNS-FRM-II-20110218 /
                      I:(DE-Juel1)JCNS-1-20110106 / I:(DE-Juel1)ZEA-2-20090406},
      pnm          = {6G15 - FRM II / MLZ (POF3-6G15) / 6G4 - Jülich Centre for
                      Neutron Research (JCNS) (POF3-623)},
      pid          = {G:(DE-HGF)POF3-6G15 / G:(DE-HGF)POF3-6G4},
      experiment   = {EXP:(DE-MLZ)KWS1-20140101},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000423302400017},
      doi          = {10.1088/1748-0221/13/01/C01042},
      url          = {https://juser.fz-juelich.de/record/843903},
}