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@ARTICLE{Menzel:843932,
      author       = {Menzel, Stephan},
      title        = {{C}omprehensive modeling of electrochemical metallization
                      memory cells},
      journal      = {Journal of computational electronics},
      volume       = {16},
      number       = {4},
      issn         = {1572-8137},
      address      = {Dordrecht},
      publisher    = {Springer Science + Business Media B.V.},
      reportid     = {FZJ-2018-01456},
      pages        = {1017 - 1037},
      year         = {2017},
      abstract     = {This paper reviews our previous theoretical studies on the
                      simulation and modeling of resistively switching
                      electrochemical metallization memory devices. The focus is
                      on the current understanding of the dynamic behavior of this
                      type of memory cells. A wide range of simulation scales is
                      presented ranging from atomistic kinetic Monte Carlo models
                      to 1D compact and analytical models. While these models show
                      consistent results in the mean dynamic behavior, they
                      address different aspects of the device behavior. With the
                      compact and analytical models, the dynamic behavior on
                      timescales ranging from nanoseconds to thousands of seconds
                      can be investigated. The computationally more expensive
                      multidimensional continuum models and kinetic Monte Carlo
                      models, in contrast, give additional information on the
                      detailed filamentary growth and dissolution mechanism, which
                      is the origin of the resistance switching effect in
                      electrochemical metallization memory cells. Using the
                      different models, the different aspects of the resistance
                      switching effect such as switching dynamics, multilevel
                      programming, filament shape, polyfilamentary switching,
                      variability, quantized conduction and polarity-independent
                      filament dissolution are addressed. Moreover, it will be
                      discussed how the models need to be extended in order to
                      address further properties of the switching process.},
      cin          = {PGI-7 / JARA-FIT},
      ddc          = {004},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000417598100005},
      doi          = {10.1007/s10825-017-1051-2},
      url          = {https://juser.fz-juelich.de/record/843932},
}