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@ARTICLE{Schnhals:843933,
      author       = {Schönhals, Alexander and Rosário, Carlos M. M. and Waser,
                      R. and Hoffmann-Eifert, Susanne and Menzel, Stephan and
                      Wouters, Dirk J.},
      title        = {{R}ole of the {E}lectrode {M}aterial on the {RESET}
                      {L}imitation in {O}xide {R}e{RAM} {D}evices},
      journal      = {Advanced electronic materials},
      volume       = {4},
      number       = {2},
      issn         = {2199-160X},
      address      = {Chichester},
      publisher    = {Wiley},
      reportid     = {FZJ-2018-01457},
      pages        = {1700243 -},
      year         = {2018},
      abstract     = {Metal-oxide-based bipolar resistive switching (BRS)
                      redox-based resistive switching memory (ReRAM) shows many
                      outstanding properties making it of interest as an emerging
                      nonvolatile memory. However, it often suffers from a low
                      ROFF/RON ratio, while a large ratio is desired to compensate
                      for read margin loss due to the intrinsic variability of the
                      ReRAM cells. Understanding of the physical processes
                      responsible for limitations of the ROFF and RON in ReRAM
                      cells is therefore of high importance. In this paper a study
                      on the RESET process in BRS Ta2O5-based ReRAM cells is
                      presented. The ROFF is found to be limited by a secondary
                      volatile resistive switching mode that shows an opposite
                      polarity compared to the main BRS mode. Based on results of
                      switching kinetics measurements a physical model is
                      proposed. It involves an oxygen exchange reaction at the
                      metal-oxide/active electrode interface combined with a
                      drift-diffusion induced migration of the resulting oxygen
                      vacancy defects within the metal-oxide. Incorporation of a
                      thin oxygen-blocking layer at the active interface allows
                      for a suppression of the secondary switching mechanism. The
                      improved RESET characteristic results in a strongly
                      increased maximum ROFF. These results provide new insights
                      into the role of the electrode material on the RESET process
                      in BRS ReRAM cells.},
      cin          = {PGI-7 / JARA-FIT},
      ddc          = {621.3},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000424888600002},
      doi          = {10.1002/aelm.201700243},
      url          = {https://juser.fz-juelich.de/record/843933},
}