Home > Publications database > Tuning the Switching Behavior of Nano-Crossbar Reram Devices By Design and Process Treatment of ALD Functional Oxide Layer Stacks
 
Conference Presentation (Invited) FZJ-2018-01469
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Tuning the Switching Behavior of Nano-Crossbar Reram Devices By Design and Process Treatment of ALD Functional Oxide Layer Stacks

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2017

ECS Meeting, National HarborNational Harbor, USA, 28 Aug 2017 - 31 Aug 20172017-08-282017-08-31

Contributing Institute(s):
  1. Elektronische Materialien (PGI-7)
  2. JARA-FIT (JARA-FIT)
  3. JARA Institut Green IT (PGI-10)
Research Program(s):
  1. 524 - Controlling Collective States (POF3-524) (POF3-524)

Appears in the scientific report 2018
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The record appears in these collections:
Document types > Presentations > Conference Presentations
JARA > JARA > JARA-JARA\-FIT
Institute Collections > PGI > PGI-10
Institute Collections > PGI > PGI-7
Workflow collections > Public records
Publications database
 Record created 2018-02-26, last modified 2021-01-29
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