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@INPROCEEDINGS{Rosario:843952,
      author       = {Rosario, C. M. M. and Thöner, Bo and Schönhals, A. and
                      Menzel, Stephan and Wuttig, M. and Waser, R. and Sobolev, N.
                      A. and Wouters, D.},
      title        = {{DIFFERENT} {TRANSPORT} {PROPERTIES} {AT} {VERY} {LOW}
                      {TEMPERATURES} {BETWEEN} {SUBSTOICHIOMETRIC} {T}a{O}x {IN}
                      {R}e{RAM} {CONDUCTIVE} {FILAMENTS} {AND} {IN} {THIN}
                      {FILMS}},
      reportid     = {FZJ-2018-01475},
      year         = {2017},
      month         = {Aug},
      date          = {2017-08-30},
      organization  = {Non-volatile Memory Technology
                       Symposium, Aachen (Germany), 30 Aug
                       2017 - 1 Sep 2017},
      subtyp        = {Other},
      cin          = {PGI-7 / JARA-FIT},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)24},
      url          = {https://juser.fz-juelich.de/record/843952},
}