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@PHDTHESIS{vondenDriesch:844060,
      author       = {von den Driesch, Nils},
      title        = {{E}pitaxy of group {IV} {S}i-{G}e-{S}n alloys for advanced
                      heterostructure light emitters},
      volume       = {163},
      school       = {RWTH Aachen},
      type         = {Dr.},
      address      = {Jülich},
      publisher    = {Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag},
      reportid     = {FZJ-2018-01569},
      isbn         = {978-3-95806-300-6},
      series       = {Schriften des Forschungszentrums Jülich. Reihe
                      Schlüsseltechnologien / Key Technologies},
      pages        = {VIII, 149 S.},
      year         = {2018},
      note         = {RWTH Aachen, Diss., 2018},
      abstract     = {Over the last decades, silicon-based integrated circuits
                      underpinned information technology. To keep up with the
                      demand for faster and, becoming increasingly more relevant
                      nowadays, energy-efficient electronics, smart solutions
                      targeting power consumptionare required. Integration of
                      photonic components, e.g. for replacing part of copper
                      interconnects, could strongly reduce on-chip dissipation.
                      Prerequisite for efficient active optoelectronic devices,
                      however not available in group IV elements, is a direct
                      bandgap. Only recently though, a truly silicon-compatible
                      solution was demonstrated by tin-based group IV GeSn alloys,
                      which offer a direct bandgap for acubic lattice and Sn
                      concentrations above 9 $at.\%.$ Nevertheless, when moving
                      froman experimental direct bandgap demonstration towards
                      readily integrated light emitters, plenty of challenges have
                      to be overcome. In this work, some of the remaining key
                      aspects are investigated. $\textit{Reduced-pressure chemical
                      vapor deposition}$ on 200mm (Ge-buffered) Si wafers was used
                      to form the investigated Si-Ge-Sn alloys. GeSn layers with
                      subtitutionally incorporated Sn concentrations up to 14
                      at.\%, considerably exceeding the solid solubility limit of
                      1 at.\% Sn in Ge, were epitaxially grown to study growth
                      kinetics. The necessary strain relieve in GeSn binaries was
                      studied growing layers with thicknesses up to 1 μm, well
                      above the critical thickness for strain relaxation.
                      Influence of both, Sn incorporation and residual strain, on
                      the optical properties was probed using
                      temperature-dependent photoluminescence and reflection
                      spectroscopy. Mid infrared light emission was found at
                      wavelengths as long as 3.4 μm (0.37 eV) at room
                      temperature. Overall, the investigated GeSn material system
                      allows to cover a range up to about 2 μm (0.60 eV), making
                      these binaries also interesting for a multitude of chemical
                      and biological sensing applications. [...]},
      cin          = {PGI-9},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)3 / PUB:(DE-HGF)11},
      urn          = {urn:nbn:de:0001-2018050969},
      url          = {https://juser.fz-juelich.de/record/844060},
}