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| Hauptseite > Publikationsdatenbank > Epitaxy of group IV Si-Ge-Sn alloys for advanced heterostructure light emitters > print |
| Hauptseite > Publikationsdatenbank > Epitaxy of group IV Si-Ge-Sn alloys for advanced heterostructure light emitters > print |
| 001 | 844060 | ||
| 005 | 20220930130141.0 | ||
| 020 | _ | _ | |a 978-3-95806-300-6 |
| 024 | 7 | _ | |2 Handle |a 2128/17681 |
| 024 | 7 | _ | |2 URN |a urn:nbn:de:0001-2018050969 |
| 024 | 7 | _ | |2 ISSN |a 1866-1807 |
| 037 | _ | _ | |a FZJ-2018-01569 |
| 041 | _ | _ | |a English |
| 100 | 1 | _ | |0 P:(DE-Juel1)161247 |a von den Driesch, Nils |b 0 |e Corresponding author |g male |u fzj |
| 245 | _ | _ | |a Epitaxy of group IV Si-Ge-Sn alloys for advanced heterostructure light emitters |f - 2018-02-02 |
| 260 | _ | _ | |a Jülich |b Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag |c 2018 |
| 300 | _ | _ | |a VIII, 149 S. |
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| 336 | 7 | _ | |0 PUB:(DE-HGF)11 |2 PUB:(DE-HGF) |a Dissertation / PhD Thesis |b phd |m phd |s 1521033173_32370 |
| 336 | 7 | _ | |2 DRIVER |a doctoralThesis |
| 490 | 0 | _ | |a Schriften des Forschungszentrums Jülich. Reihe Schlüsseltechnologien / Key Technologies |v 163 |
| 502 | _ | _ | |a RWTH Aachen, Diss., 2018 |b Dr. |c RWTH Aachen |d 2018 |
| 520 | _ | _ | |a Over the last decades, silicon-based integrated circuits underpinned information technology. To keep up with the demand for faster and, becoming increasingly more relevant nowadays, energy-efficient electronics, smart solutions targeting power consumptionare required. Integration of photonic components, e.g. for replacing part of copper interconnects, could strongly reduce on-chip dissipation. Prerequisite for efficient active optoelectronic devices, however not available in group IV elements, is a direct bandgap. Only recently though, a truly silicon-compatible solution was demonstrated by tin-based group IV GeSn alloys, which offer a direct bandgap for acubic lattice and Sn concentrations above 9 at.%. Nevertheless, when moving froman experimental direct bandgap demonstration towards readily integrated light emitters, plenty of challenges have to be overcome. In this work, some of the remaining key aspects are investigated. $\textit{Reduced-pressure chemical vapor deposition}$ on 200mm (Ge-buffered) Si wafers was used to form the investigated Si-Ge-Sn alloys. GeSn layers with subtitutionally incorporated Sn concentrations up to 14 at.%, considerably exceeding the solid solubility limit of 1 at.% Sn in Ge, were epitaxially grown to study growth kinetics. The necessary strain relieve in GeSn binaries was studied growing layers with thicknesses up to 1 μm, well above the critical thickness for strain relaxation. Influence of both, Sn incorporation and residual strain, on the optical properties was probed using temperature-dependent photoluminescence and reflection spectroscopy. Mid infrared light emission was found at wavelengths as long as 3.4 μm (0.37 eV) at room temperature. Overall, the investigated GeSn material system allows to cover a range up to about 2 μm (0.60 eV), making these binaries also interesting for a multitude of chemical and biological sensing applications. [...] |
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