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@PHDTHESIS{Fink:844535,
      author       = {Fink, Thomas},
      title        = {{B}etrachtung der {K}ristallinitätsentwicklung in
                      mikrokristallinem {D}ünnschicht-{S}iliziummit in-situ
                      {R}aman-{S}pektroskopie},
      volume       = {405},
      school       = {RWTH Aachen},
      type         = {Dissertation},
      address      = {Jülich},
      publisher    = {Forschungszentrum Jülich GmbH Zenralbibliothek, Verlag},
      reportid     = {FZJ-2018-01942},
      isbn         = {978-3-95806-289-4},
      series       = {Schriften des Forschungszentrums Jülich Reihe Energie $\&$
                      Umwelt / Energy $\&$ Environment},
      pages        = {XI, 166 S.},
      year         = {2018},
      note         = {RWTH Aachen, Diss., 2017},
      abstract     = {In this thesis, the correlation between the preparation of
                      hydrogenerated microcrystalline silicon ($\mu$c-Si:H), the
                      evolution of the crystalline volume fraction and the
                      performance of thin-film silicon solar cells is
                      investigated. Microcrystalline silicon is a heterogeneous
                      mixed phase material, composed of crystalline and amorphous
                      domains, grain boundaries and voids.For the fabrication of
                      $\mu$c-Si:H plasma enhanced chemical vapor deposition
                      (PECVD) is acommonly used technique. The crystalline volume
                      fraction of $\mu$c-Si:H is of fundamental importance for the
                      material quality and can be estimated by the Raman
                      crystallinity. Most favorable material properties for the
                      application as absorber layer in solar cells are detected
                      close to the transition to hydrogenated amorphous silicon
                      (a-Si:H) and for Raman crystallinities between 60 \% and 70
                      \%. To characterize the evolution of the Raman crystallinity
                      in growth direction, an institution’s internal setup was
                      used that enables the monitoring of Raman spectra during the
                      silicon deposition with high depth resolution of < 10 nm.
                      The already existing setup was developed further in this
                      thesis: A coating protection was designed to reduce the
                      coating rate on the Raman optics in the PECVD-reactor by one
                      order of magnitude. Moreover, the optical materials were
                      optimized for the detection of the Raman spectra of
                      $\mu$c-Si:H and the data analysis was automatized. [...]},
      cin          = {IEK-5},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {121 - Solar cells of the next generation (POF3-121)},
      pid          = {G:(DE-HGF)POF3-121},
      typ          = {PUB:(DE-HGF)3 / PUB:(DE-HGF)11},
      urn          = {urn:nbn:de:0001-2018032818},
      url          = {https://juser.fz-juelich.de/record/844535},
}