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@ARTICLE{Rhr:844546,
      author       = {Röhr, Jason A and Moia, Davide and Haque, Saif A and
                      Kirchartz, Thomas and Nelson, Jenny},
      title        = {{E}xploring the validity and limitations of the
                      {M}ott–{G}urney law for charge-carrier mobility
                      determination of semiconducting thin-films},
      journal      = {Journal of physics / Condensed matter},
      volume       = {30},
      number       = {10},
      issn         = {1361-648X},
      address      = {Bristol},
      publisher    = {IOP Publ.},
      reportid     = {FZJ-2018-01953},
      pages        = {105901},
      year         = {2018},
      abstract     = {Using drift-diffusion simulations, we investigate the
                      voltage dependence of the dark current in single carrier
                      devices typically used to determine charge-carrier
                      mobilities. For both low and high voltages, the current
                      increases linearly with the applied voltage. Whereas the
                      linear current at low voltages is mainly due to space charge
                      in the middle of the device, the linear current at high
                      voltage is caused by charge-carrier saturation due to a high
                      degree of injection. As a consequence, the current density
                      at these voltages does not follow the classical square law
                      derived by Mott and Gurney, and we show that for trap-free
                      devices, only for intermediate voltages, a
                      space-charge-limited drift current can be observed with a
                      slope that approaches a value of two. We show that,
                      depending on the thickness of the semiconductor layer and
                      the size of the injection barriers, the two linear
                      current–voltage regimes can dominate the whole voltage
                      range, and the intermediate Mott–Gurney regime can shrink
                      or disappear. In this case, which will especially occur for
                      thicknesses and injection barriers typical of single-carrier
                      devices used to probe organic semiconductors, a meaningful
                      analysis using the Mott–Gurney law will become
                      unachievable, because a square-law fit can no longer be
                      achieved, resulting in the mobility being substantially
                      underestimated. General criteria for when to expect
                      deviations from the Mott–Gurney law when used for analysis
                      of intrinsic semiconductors are discussed.},
      cin          = {IEK-5},
      ddc          = {530},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {121 - Solar cells of the next generation (POF3-121)},
      pid          = {G:(DE-HGF)POF3-121},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:29381142},
      UT           = {WOS:000425435800001},
      doi          = {10.1088/1361-648X/aaabad},
      url          = {https://juser.fz-juelich.de/record/844546},
}