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@ARTICLE{Szot:844596,
      author       = {Szot, K. and Rodenbücher, Christian and Bihlmayer, Gustav
                      and Speier, Wolfgang and Ishikawa, Ryo and Shibata, Naoya
                      and Ikuhara, Yuichi},
      title        = {{I}nfluence of {D}islocations in {T}ransition {M}etal
                      {O}xides on {S}elected {P}hysical and {C}hemical
                      {P}roperties},
      journal      = {Crystals},
      volume       = {8},
      number       = {6},
      issn         = {2073-4352},
      address      = {Basel},
      publisher    = {MDPI},
      reportid     = {FZJ-2018-02000},
      pages        = {241 -},
      year         = {2018},
      note         = {enthält Publikationsgebühren (Bildrechte)},
      abstract     = {Studies on dislocations in prototypic binary and ternary
                      oxides (here TiO2 and SrTiO3) using modern TEM and scanning
                      probe microscopy (SPM) techniques, combined with classical
                      etch pits methods, are reviewed. Our review focuses on the
                      important role of dislocations in the insulator-to-metal
                      transition and for redox processes, which can be
                      preferentially induced along dislocations using chemical and
                      electrical gradients. It is surprising that, independently
                      of the growth techniques, the density of dislocations in the
                      surface layers of both prototypical oxides is high
                      (109/cm$^2$ for epipolished surfaces and up to 1012/cm2 for
                      the rough surface). The TEM and locally-conducting atomic
                      force microscopy (LCAFM) measurements show that the
                      dislocations create a network with the character of a
                      hierarchical tree. The distribution of the dislocations in
                      the plane of the surface is, in principle, inhomogeneous,
                      namely a strong tendency for the bundling and creation of
                      arrays or bands in the crystallographic <100> and <110>
                      directions can be observed. The analysis of the core of
                      dislocations using scanning transmission electron microscopy
                      (STEM) techniques (such as EDX with atomic resolution,
                      electron-energy loss spectroscopy (EELS)) shows
                      unequivocally that the core of dislocations possesses a
                      different crystallographic structure, electronic structure
                      and chemical composition relative to the matrix. Because the
                      Burgers vector of dislocations is per se invariant, the
                      network of dislocations (with additional d$^1$ electrons)
                      causes an electrical short-circuit of the matrix. This
                      behavior is confirmed by LCAFM measurements for the
                      stoichiometric crystals, moreover a similar dominant role of
                      dislocations in channeling of the current after thermal
                      reduction of the crystals or during resistive switching can
                      be observed. In our opinion, the easy transformation of the
                      chemical composition of the surface layers of both model
                      oxides should be associated with the high concentration of
                      extended defects in this region. Another important insight
                      for the analysis of the physical properties in real oxide
                      crystals (matrix + dislocations) comes from the studies of
                      the nucleation of dislocations via in situ STEM indentation,
                      namely that the dislocations can be simply nucleated under
                      mechanical stimulus and can be easily moved at room
                      temperature.},
      cin          = {PGI-7 / JARA-FIT / PGI-1 / IAS-1},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$ /
                      I:(DE-Juel1)PGI-1-20110106 / I:(DE-Juel1)IAS-1-20090406},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000436129400010},
      doi          = {10.3390/cryst8060241},
      url          = {https://juser.fz-juelich.de/record/844596},
}