000844750 001__ 844750
000844750 005__ 20220930130144.0
000844750 0247_ $$2Handle$$a2128/17929
000844750 0247_ $$2URN$$aurn:nbn:de:0001-2018050980
000844750 0247_ $$2ISSN$$a1866-1807
000844750 020__ $$a978-3-95806-312-9
000844750 037__ $$aFZJ-2018-02130
000844750 041__ $$aEnglish
000844750 1001_ $$0P:(DE-Juel1)161530$$aSchulte-Braucks, Christian$$b0$$eCorresponding author$$gmale$$ufzj
000844750 245__ $$aInvestigation of GeSn as Novel Group IV Semiconductor for Electronic Applications$$f- 2017-12-21
000844750 260__ $$aJülich$$bForschungszentrum Jülich GmbH Zentralbibliothek, Verlag$$c2018
000844750 300__ $$aXX, 165, XII S.
000844750 3367_ $$2DataCite$$aOutput Types/Dissertation
000844750 3367_ $$0PUB:(DE-HGF)3$$2PUB:(DE-HGF)$$aBook$$mbook
000844750 3367_ $$2ORCID$$aDISSERTATION
000844750 3367_ $$2BibTeX$$aPHDTHESIS
000844750 3367_ $$02$$2EndNote$$aThesis
000844750 3367_ $$0PUB:(DE-HGF)11$$2PUB:(DE-HGF)$$aDissertation / PhD Thesis$$bphd$$mphd$$s1522312387_23311
000844750 3367_ $$2DRIVER$$adoctoralThesis
000844750 4900_ $$aSchriften des Forschungszentrums Jülich. Reihe Schlüsseltechnologien / Key Technologies$$v168
000844750 502__ $$aRWTH Aachen, Diss., 2017$$bDr.$$cRWTH Aachen$$d2017
000844750 520__ $$aWithin the last few years single crystalline GeSn semiconductor alloys aroused significant scientific interest, especially since 2015, when GeSn with sufficiently high Sn content and crystalline quality was demonstrated as fundamentally direct bandgap group IV semiconductor. While enhanced optical properties are evident for direct bandgap materials compared to the fundamentally indirect Ge and Si group IV semiconductors, also enhanced electrical properties like increased carrier mobilities and enhanced band-to-band tunneling are expected for direct bandgap GeSn which are beneficial for metal-oxide semiconductor transistors and tunnel field-effect transistors, respectively. The novel GeSn semiconductor alloys thereby manifests a fascinating emerging material system allowing a wide scope to study its fundamental physical, electrical, optical and chemical properties. On the other hand the novelty of the material system demands the re-development or modification and verification of all steps necessary to build GeSn based semiconductor devices. A comprehensive study is presented, focusing on the electrical properties of GeSn, their dependence on Sn content and possible applications in novel electronic devices. The building blocks of field-effect transistors are studied individually. GeSn surface composition and manipulation are investigated $\textit{via}$ X-ray photoemission spectroscopy to study pre-high-$\kappa$ deposition cleaning and highly selective Ge/GeSn etching processes. NiGeSn alloys for the use as electrical contacts of GeSn devices are structurally and electrically characterized using X-ray diffraction, transmission electron microscopy and temperature dependent current voltage measurements, respectively. Schottky barrier height, sheet resistance and specific contact resistivity are extracted. The modification of the NiGeSn/GeSn Schottky barrier height $\textit{via}$ dopant segregation is demonstrated for the first time. Schottky-barrier heights as low as 0.06 eV are observed. As a next module metal-oxide-semiconductor capacitors are comprehensively studied. High-$\kappa$/GeSn interface trap densities are extracted for a wide range Sn contents. The focus is placed on the effect of the electronic band structure of GeSn on the capacitance voltage characteristics. Fundamental trends demonstrating the correlation of Sn-induced bandgap shrinkage and minority carrier response are observed. Furthermore a maximum capacitance of approx. 3 $\mu$F/cm$^{2}$ is achieved. As a step towards GeSn based tunnel field-effect transistors, Esaki diodes (tunnel diodes) are fabricated and electrically characterized. Negative differential resistance with a peak-to-valley current  ratio of 2.3 is observed as an experimental proof of band-to-band tunneling. Enhanced band-to-band tunneling rates are observed in Ge$_{0.89}$Sn$_{0.11}$ $\textit{p-i-n}$ diodes compared to Ge taking advantage of the low and direct bandgap. These studies lead to the realization of vertical heterojunction Ge$_{0.93}$Sn$_{0.07}$/Ge tunnel field-effect transistors. An extensive analysis is provided identifying the various contributions to the overall transistor current, particularly band-to-band tunneling and trap-assisted tunneling. Finally, Hall measurements are presented, showing enhanced electron mobilities in direct bandgap GeSn as compared to Ge. With up to 4600 cm$^{2}$/Vs this marks the highest bulk electron mobilities at the respective doping level of 2.9 · 10$^{17}$ cm$^{−3}$ in a group IV semiconductor so far.
000844750 536__ $$0G:(DE-HGF)POF3-521$$a521 - Controlling Electron Charge-Based Phenomena (POF3-521)$$cPOF3-521$$fPOF III$$x0
000844750 8564_ $$uhttps://juser.fz-juelich.de/record/844750/files/Schluesseltech_168.pdf$$yOpenAccess
000844750 8564_ $$uhttps://juser.fz-juelich.de/record/844750/files/Schluesseltech_168.gif?subformat=icon$$xicon$$yOpenAccess
000844750 8564_ $$uhttps://juser.fz-juelich.de/record/844750/files/Schluesseltech_168.jpg?subformat=icon-1440$$xicon-1440$$yOpenAccess
000844750 8564_ $$uhttps://juser.fz-juelich.de/record/844750/files/Schluesseltech_168.jpg?subformat=icon-180$$xicon-180$$yOpenAccess
000844750 8564_ $$uhttps://juser.fz-juelich.de/record/844750/files/Schluesseltech_168.jpg?subformat=icon-640$$xicon-640$$yOpenAccess
000844750 909CO $$ooai:juser.fz-juelich.de:844750$$pVDB$$pdriver$$purn$$popen_access$$popenaire$$pdnbdelivery
000844750 915__ $$0StatID:(DE-HGF)0510$$2StatID$$aOpenAccess
000844750 915__ $$0LIC:(DE-HGF)CCBY4$$2HGFVOC$$aCreative Commons Attribution CC BY 4.0
000844750 9141_ $$y2018
000844750 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)161530$$aForschungszentrum Jülich$$b0$$kFZJ
000844750 9131_ $$0G:(DE-HGF)POF3-521$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Electron Charge-Based Phenomena$$x0
000844750 920__ $$lyes
000844750 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000844750 980__ $$aphd
000844750 980__ $$aVDB
000844750 980__ $$aUNRESTRICTED
000844750 980__ $$abook
000844750 980__ $$aI:(DE-Juel1)PGI-9-20110106
000844750 9801_ $$aFullTexts