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@ARTICLE{Plank:844850,
      author       = {Plank, H. and Pernul, J. and Gebert, S. and Danilov, S. N.
                      and König-Otto, J. and Winnerl, S. and Lanius, Martin and
                      Kampmeier, Jörn and Mussler, G. and Aguilera, I. and
                      Grützmacher, D. and Ganichev, S. D.},
      title        = {{I}nfrared/terahertz spectra of the photogalvanic effect in
                      ({B}i,{S}b){T}e based three-dimensional topological
                      insulators},
      journal      = {Physical review materials},
      volume       = {2},
      number       = {2},
      issn         = {2475-9953},
      address      = {College Park, MD},
      publisher    = {APS},
      reportid     = {FZJ-2018-02201},
      pages        = {024202},
      year         = {2018},
      abstract     = {We report on the systematic study of infrared/terahertz
                      spectra of photocurrents in (Bi,Sb)Te based
                      three-dimensional topological insulators. We demonstrate
                      that in a wide range of frequencies, ranging from fractions
                      up to tens of terahertz, the photocurrent is caused by the
                      linear photogalvanic effect (LPGE) excited in the surface
                      states. The photocurrent spectra reveal that at low
                      frequencies the LPGE emerges due to free carrier Drude-like
                      absorption. The spectra allow us to determine the room
                      temperature carrier mobilities in the surface states despite
                      the presence of thermally activated residual impurities in
                      the material bulk. In a number of samples we observed an
                      enhancement of the linear photogalvanic effect at
                      frequencies between 30 and 60 THz, which is attributed to
                      the excitation of electrons from helical surface to bulk
                      conduction band states. Under this condition and applying
                      oblique incidence we also observed the circular
                      photogalvanic effect driven by the radiation helicity.},
      cin          = {IAS-1 / PGI-1 / JARA-FIT / JARA-HPC / PGI-9},
      ddc          = {530},
      cid          = {I:(DE-Juel1)IAS-1-20090406 / I:(DE-Juel1)PGI-1-20110106 /
                      $I:(DE-82)080009_20140620$ / $I:(DE-82)080012_20140620$ /
                      I:(DE-Juel1)PGI-9-20110106},
      pnm          = {142 - Controlling Spin-Based Phenomena (POF3-142) / 143 -
                      Controlling Configuration-Based Phenomena (POF3-143)},
      pid          = {G:(DE-HGF)POF3-142 / G:(DE-HGF)POF3-143},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000425309700003},
      doi          = {10.1103/PhysRevMaterials.2.024202},
      url          = {https://juser.fz-juelich.de/record/844850},
}